Mobility overestimation due to gated contacts in organic field-effect transistors

Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process...

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Autores principales:	Emily G. Bittle, James I. Basham, Thomas N. Jackson, Oana D. Jurchescu, David J. Gundlach
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/6467caace8024de1b053a2a0bc33e81b
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spelling	oai:doaj.org-article:6467caace8024de1b053a2a0bc33e81b2021-12-02T14:39:33ZMobility overestimation due to gated contacts in organic field-effect transistors10.1038/ncomms109082041-1723https://doaj.org/article/6467caace8024de1b053a2a0bc33e81b2016-03-01T00:00:00Zhttps://doi.org/10.1038/ncomms10908https://doaj.org/toc/2041-1723Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process.Emily G. BittleJames I. BashamThomas N. JacksonOana D. JurchescuDavid J. GundlachNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Emily G. Bittle James I. Basham Thomas N. Jackson Oana D. Jurchescu David J. Gundlach Mobility overestimation due to gated contacts in organic field-effect transistors
description	Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process.
format	article
author	Emily G. Bittle James I. Basham Thomas N. Jackson Oana D. Jurchescu David J. Gundlach
author_facet	Emily G. Bittle James I. Basham Thomas N. Jackson Oana D. Jurchescu David J. Gundlach
author_sort	Emily G. Bittle
title	Mobility overestimation due to gated contacts in organic field-effect transistors
title_short	Mobility overestimation due to gated contacts in organic field-effect transistors
title_full	Mobility overestimation due to gated contacts in organic field-effect transistors
title_fullStr	Mobility overestimation due to gated contacts in organic field-effect transistors
title_full_unstemmed	Mobility overestimation due to gated contacts in organic field-effect transistors
title_sort	mobility overestimation due to gated contacts in organic field-effect transistors
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/6467caace8024de1b053a2a0bc33e81b
work_keys_str_mv	AT emilygbittle mobilityoverestimationduetogatedcontactsinorganicfieldeffecttransistors AT jamesibasham mobilityoverestimationduetogatedcontactsinorganicfieldeffecttransistors AT thomasnjackson mobilityoverestimationduetogatedcontactsinorganicfieldeffecttransistors AT oanadjurchescu mobilityoverestimationduetogatedcontactsinorganicfieldeffecttransistors AT davidjgundlach mobilityoverestimationduetogatedcontactsinorganicfieldeffecttransistors
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Mobility overestimation due to gated contacts in organic field-effect transistors

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