Mobility overestimation due to gated contacts in organic field-effect transistors
Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process...
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Autores principales: | Emily G. Bittle, James I. Basham, Thomas N. Jackson, Oana D. Jurchescu, David J. Gundlach |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
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Materias: | |
Acceso en línea: | https://doaj.org/article/6467caace8024de1b053a2a0bc33e81b |
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