Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

Abstract Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in the field of infrared detection and imaging. Within type–II superlattices, InAs/In...

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Autores principales:	Abbas Haddadi, Arash Dehzangi, Romain Chevallier, Sourav Adhikary, Manijeh Razeghi
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/64ea48d125b54850aa2abd1ee5cf949f
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spelling	oai:doaj.org-article:64ea48d125b54850aa2abd1ee5cf949f2021-12-02T12:32:12ZBias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices10.1038/s41598-017-03238-22045-2322https://doaj.org/article/64ea48d125b54850aa2abd1ee5cf949f2017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-03238-2https://doaj.org/toc/2045-2322Abstract Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in the field of infrared detection and imaging. Within type–II superlattices, InAs/InAs1−xSbx T2SLs have been shown to have a significantly longer minority carrier lifetime. However, demonstration of high–performance dual–band photodetectors based on InAs/InAs1−xSbx T2SLs in the long and very long wavelength infrared (LWIR & VLWIR) regimes remains challenging. We report the demonstration of high–performance bias–selectable dual–band long–wavelength infrared photodetectors based on new InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattice design. Our design uses two different bandgap absorption regions separated by an electron barrier that blocks the transport of majority carriers to reduce the dark current density of the device. As the applied bias is varied, the device exhibits well–defined cut–off wavelengths of either ∼8.7 or ∼12.5 μm at 77 K. This bias–selectable dual–band photodetector is compact, with no moving parts, and will open new opportunities for multi–spectral LWIR and VLWIR imaging and detection.Abbas HaddadiArash DehzangiRomain ChevallierSourav AdhikaryManijeh RazeghiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Abbas Haddadi Arash Dehzangi Romain Chevallier Sourav Adhikary Manijeh Razeghi Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
description	Abstract Type–II superlattices (T2SLs) are a class of artificial semiconductors that have demonstrated themselves as a viable candidate to compete with the state–of–the–art mercury–cadmium–telluride material system in the field of infrared detection and imaging. Within type–II superlattices, InAs/InAs1−xSbx T2SLs have been shown to have a significantly longer minority carrier lifetime. However, demonstration of high–performance dual–band photodetectors based on InAs/InAs1−xSbx T2SLs in the long and very long wavelength infrared (LWIR & VLWIR) regimes remains challenging. We report the demonstration of high–performance bias–selectable dual–band long–wavelength infrared photodetectors based on new InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattice design. Our design uses two different bandgap absorption regions separated by an electron barrier that blocks the transport of majority carriers to reduce the dark current density of the device. As the applied bias is varied, the device exhibits well–defined cut–off wavelengths of either ∼8.7 or ∼12.5 μm at 77 K. This bias–selectable dual–band photodetector is compact, with no moving parts, and will open new opportunities for multi–spectral LWIR and VLWIR imaging and detection.
format	article
author	Abbas Haddadi Arash Dehzangi Romain Chevallier Sourav Adhikary Manijeh Razeghi
author_facet	Abbas Haddadi Arash Dehzangi Romain Chevallier Sourav Adhikary Manijeh Razeghi
author_sort	Abbas Haddadi
title	Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
title_short	Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
title_full	Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
title_fullStr	Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
title_full_unstemmed	Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices
title_sort	bias–selectable nbn dual–band long–/very long–wavelength infrared photodetectors based on inas/inas1−xsbx/alas1−xsbx type–ii superlattices
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/64ea48d125b54850aa2abd1ee5cf949f
work_keys_str_mv	AT abbashaddadi biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices AT arashdehzangi biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices AT romainchevallier biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices AT souravadhikary biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices AT manijehrazeghi biasselectablenbndualbandlongverylongwavelengthinfraredphotodetectorsbasedoninasinas1xsbxalas1xsbxtypeiisuperlattices
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Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

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