Superconducting properties of single crystal wires of lead telluride doped with thallium active pore materials based on sludges of Cr-Ni alloy electrochemical machining
Results of the measurements of temperature dependences of resistivity of thin single crystal wires of PbTe in the temperature region 0.4 ÷ 4.2 K are presented. Thallium average concentration was 0.001 ÷ 0.02 at.%. Single crystal wires (with diameters d = 5 ÷ 100 μm) were obtained by filling of...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/658542ea13f246c6b77e475124e0ce6d |
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| Sumario: | Results of the measurements of temperature dependences of resistivity of thin single
crystal wires of PbTe in the temperature region 0.4 ÷ 4.2 K are presented. Thallium average concentration was 0.001 ÷ 0.02 at.%. Single crystal wires (with diameters
d = 5 ÷ 100 μm) were obtained by filling of quartz capillary with the solution melt with the
following directed crystallization of this material. The structural perfection of investigated
samples was tested by X-ray diffraction and LAMMA analysis. It is revealed, that at low
temperatures in single crystal wires of PbTe transition in a superconducting state is
observed. The temperature of transition correlates with impurity concentration (for single
crystal wires of PbTe at thallium concentration 2% Tc=2,1K). Mechanisms leading to superconducting transition and features of temperature dependence of resistance in the field of previous transition are discussed. The interpretation of the
obtained results is given based on model of an impurity with skipped valence.
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