Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
In photodetectors based on 2D materials, a trade-off often exists between responsivity and speed. Here, the authors attenuate this issue via integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe2 phototransistor.
Guardado en:
Autores principales: | , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/65f632af36364bbaa2f92e55a6c092fe |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sumario: | In photodetectors based on 2D materials, a trade-off often exists between responsivity and speed. Here, the authors attenuate this issue via integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe2 phototransistor. |
---|