Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction

In photodetectors based on 2D materials, a trade-off often exists between responsivity and speed. Here, the authors attenuate this issue via integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe2 phototransistor.

Saved in:
Bibliographic Details
Main Authors: Sayantan Ghosh, Abin Varghese, Kartikey Thakar, Sushovan Dhara, Saurabh Lodha
Format: article
Language:EN
Published: Nature Portfolio 2021
Subjects:
Q
Online Access:https://doaj.org/article/65f632af36364bbaa2f92e55a6c092fe
Tags: Add Tag
No Tags, Be the first to tag this record!