Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays

Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays

Abstract Tandem solar cells are suited for space applications due to their high performance, but also have to be designed in such a way to minimize influence of degradation by the high energy particle flux in space. The analysis of the subcell performance is crucial to understand the device physics...

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Autores principales: David M. Tex, Tetsuya Nakamura, Mitsuru Imaizumi, Takeshi Ohshima, Yoshihiko Kanemitsu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
Materias:
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Science
Q
Acceso en línea:https://doaj.org/article/65fa473cb47444f3ba982a10d0bd89d9
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spelling oai:doaj.org-article:65fa473cb47444f3ba982a10d0bd89d92021-12-02T11:53:06ZDirect evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays10.1038/s41598-017-02141-02045-2322https://doaj.org/article/65fa473cb47444f3ba982a10d0bd89d92017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02141-0https://doaj.org/toc/2045-2322Abstract Tandem solar cells are suited for space applications due to their high performance, but also have to be designed in such a way to minimize influence of degradation by the high energy particle flux in space. The analysis of the subcell performance is crucial to understand the device physics and achieve optimized designs of tandem solar cells. Here, the radiation-induced damage of inverted grown InGaP/GaAs/InGaAs triple-junction solar cells for various electron fluences are characterized using conventional current-voltage (I–V) measurements and time-resolved photoluminescence (PL). The conversion efficiencies of the entire device before and after damage are measured with I–V curves and compared with the efficiencies predicted from the time-resolved method. Using the time-resolved data the change in the carrier dynamics in the subcells can be discussed. Our optical method allows to predict the absolute electrical conversion efficiency of the device with an accuracy of better than 5%. While both InGaP and GaAs subcells suffered from significant material degradation, the performance loss of the total device can be completely ascribed to the damage in the GaAs subcell. This points out the importance of high internal electric fields at the operating point.David M. TexTetsuya NakamuraMitsuru ImaizumiTakeshi OhshimaYoshihiko KanemitsuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
David M. Tex
Tetsuya Nakamura
Mitsuru Imaizumi
Takeshi Ohshima
Yoshihiko Kanemitsu
Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
description Abstract Tandem solar cells are suited for space applications due to their high performance, but also have to be designed in such a way to minimize influence of degradation by the high energy particle flux in space. The analysis of the subcell performance is crucial to understand the device physics and achieve optimized designs of tandem solar cells. Here, the radiation-induced damage of inverted grown InGaP/GaAs/InGaAs triple-junction solar cells for various electron fluences are characterized using conventional current-voltage (I–V) measurements and time-resolved photoluminescence (PL). The conversion efficiencies of the entire device before and after damage are measured with I–V curves and compared with the efficiencies predicted from the time-resolved method. Using the time-resolved data the change in the carrier dynamics in the subcells can be discussed. Our optical method allows to predict the absolute electrical conversion efficiency of the device with an accuracy of better than 5%. While both InGaP and GaAs subcells suffered from significant material degradation, the performance loss of the total device can be completely ascribed to the damage in the GaAs subcell. This points out the importance of high internal electric fields at the operating point.
format article
author David M. Tex
Tetsuya Nakamura
Mitsuru Imaizumi
Takeshi Ohshima
Yoshihiko Kanemitsu
author_facet David M. Tex
Tetsuya Nakamura
Mitsuru Imaizumi
Takeshi Ohshima
Yoshihiko Kanemitsu
author_sort David M. Tex
title Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
title_short Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
title_full Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
title_fullStr Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
title_full_unstemmed Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
title_sort direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays
publisher Nature Portfolio
publishDate 2017
url https://doaj.org/article/65fa473cb47444f3ba982a10d0bd89d9
work_keys_str_mv AT davidmtex directevaluationofinfluenceofelectrondamageonthesubcellperformanceintriplejunctionsolarcellsusingphotoluminescencedecays
AT tetsuyanakamura directevaluationofinfluenceofelectrondamageonthesubcellperformanceintriplejunctionsolarcellsusingphotoluminescencedecays
AT mitsuruimaizumi directevaluationofinfluenceofelectrondamageonthesubcellperformanceintriplejunctionsolarcellsusingphotoluminescencedecays
AT takeshiohshima directevaluationofinfluenceofelectrondamageonthesubcellperformanceintriplejunctionsolarcellsusingphotoluminescencedecays
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