Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic propert...

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Autores principales:	Tiefeng Yang, Biyuan Zheng, Zhen Wang, Tao Xu, Chen Pan, Juan Zou, Xuehong Zhang, Zhaoyang Qi, Hongjun Liu, Yexin Feng, Weida Hu, Feng Miao, Litao Sun, Xiangfeng Duan, Anlian Pan
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/65ffbcbc018d47a6a526655aba61c01a
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spelling	oai:doaj.org-article:65ffbcbc018d47a6a526655aba61c01a2021-12-02T15:38:50ZVan der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions10.1038/s41467-017-02093-z2041-1723https://doaj.org/article/65ffbcbc018d47a6a526655aba61c01a2017-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-02093-zhttps://doaj.org/toc/2041-1723Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.Tiefeng YangBiyuan ZhengZhen WangTao XuChen PanJuan ZouXuehong ZhangZhaoyang QiHongjun LiuYexin FengWeida HuFeng MiaoLitao SunXiangfeng DuanAnlian PanNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Tiefeng Yang Biyuan Zheng Zhen Wang Tao Xu Chen Pan Juan Zou Xuehong Zhang Zhaoyang Qi Hongjun Liu Yexin Feng Weida Hu Feng Miao Litao Sun Xiangfeng Duan Anlian Pan Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
description	Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
format	article
author	Tiefeng Yang Biyuan Zheng Zhen Wang Tao Xu Chen Pan Juan Zou Xuehong Zhang Zhaoyang Qi Hongjun Liu Yexin Feng Weida Hu Feng Miao Litao Sun Xiangfeng Duan Anlian Pan
author_facet	Tiefeng Yang Biyuan Zheng Zhen Wang Tao Xu Chen Pan Juan Zou Xuehong Zhang Zhaoyang Qi Hongjun Liu Yexin Feng Weida Hu Feng Miao Litao Sun Xiangfeng Duan Anlian Pan
author_sort	Tiefeng Yang
title	Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
title_short	Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
title_full	Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
title_fullStr	Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
title_full_unstemmed	Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
title_sort	van der waals epitaxial growth and optoelectronics of large-scale wse2/sns2 vertical bilayer p–n junctions
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/65ffbcbc018d47a6a526655aba61c01a
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Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

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