Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I )....
Guardado en:
| Autores principales: | , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/662087b116e14716929f981db7bc0f99 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated
in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by
overlapping of the PL lines attributed to ISe donor-bound ecxitons (
I
2 I ) and VZn acceptor-
bound excitons ( D
1 I ). A model of radiation mechanisms, which explain the redistribution of
the edge and long-wave PL bands intensities with increasing doping level of the samples, is
proposed.
|
|---|