Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion

Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I )....

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Autores principales:	Avdonin, A., Ivanova, Galina, Nedeoglo, Dumitru, Nedeoglo, Natalia
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/662087b116e14716929f981db7bc0f99
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spelling	oai:doaj.org-article:662087b116e14716929f981db7bc0f992021-11-21T12:10:05ZPhotoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion 2537-63651810-648Xhttps://doaj.org/article/662087b116e14716929f981db7bc0f992006-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3407https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I ). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed. Avdonin, A.Ivanova, GalinaNedeoglo, DumitruNedeoglo, NataliaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 1, Pp 23-26 (2006)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Avdonin, A. Ivanova, Galina Nedeoglo, Dumitru Nedeoglo, Natalia Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
description	Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I ). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed.
format	article
author	Avdonin, A. Ivanova, Galina Nedeoglo, Dumitru Nedeoglo, Natalia
author_facet	Avdonin, A. Ivanova, Galina Nedeoglo, Dumitru Nedeoglo, Natalia
author_sort	Avdonin, A.
title	Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
title_short	Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
title_full	Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
title_fullStr	Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
title_full_unstemmed	Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
title_sort	photoluminescence of n-znse single crystals doped with iodine by vapour phase diffusion
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2006
url	https://doaj.org/article/662087b116e14716929f981db7bc0f99
work_keys_str_mv	AT avdonina photoluminescenceofnznsesinglecrystalsdopedwithiodinebyvapourphasediffusion AT ivanovagalina photoluminescenceofnznsesinglecrystalsdopedwithiodinebyvapourphasediffusion AT nedeoglodumitru photoluminescenceofnznsesinglecrystalsdopedwithiodinebyvapourphasediffusion AT nedeoglonatalia photoluminescenceofnznsesinglecrystalsdopedwithiodinebyvapourphasediffusion
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Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion

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