Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion

Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion

Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I )....

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Autores principales: Avdonin, A., Ivanova, Galina, Nedeoglo, Dumitru, Nedeoglo, Natalia
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:
Physics
QC1-999
Electronics
TK7800-8360
Acceso en línea:https://doaj.org/article/662087b116e14716929f981db7bc0f99
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