Aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices

Abstract This work reports investigation on the deposition and evaluation of an aluminum-doped zinc oxide (AZO) thin film and its novel applications to micro- and nano-devices. The AZO thin film is deposited successfully by atomic layer deposition (ALD). 50 nm-thick AZO film with high uniformity is...

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Autores principales: Nguyen Van Toan, Truong Thi Kim Tuoi, Naoki Inomata, Masaya Toda, Takahito Ono
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/664e172638ba48c185347b76944afc38
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spelling oai:doaj.org-article:664e172638ba48c185347b76944afc382021-12-02T15:23:09ZAluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices10.1038/s41598-020-80880-32045-2322https://doaj.org/article/664e172638ba48c185347b76944afc382021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-80880-3https://doaj.org/toc/2045-2322Abstract This work reports investigation on the deposition and evaluation of an aluminum-doped zinc oxide (AZO) thin film and its novel applications to micro- and nano-devices. The AZO thin film is deposited successfully by atomic layer deposition (ALD). 50 nm-thick AZO film with high uniformity is checked by scanning electron microscopy. The element composition of the deposited film with various aluminum dopant concentration is analyzed by energy-dispersive X-ray spectroscopy. In addition, a polycrystalline feature of the deposited film is confirmed by selected area electron diffraction and high-resolution transmission electron microscopy. The lowest sheet resistance of the deposited AZO film is found at 0.7 kΩ/□ with the aluminum dopant concentration at 5 at.%. A novel method employed the ALD in combination with the sacrificial silicon structures is proposed which opens the way to create the ultra-high aspect ratio AZO structures. Moreover, based on this finding, three kinds of micro- and nano-devices employing the deposited AZO thin film have been proposed and demonstrated. Firstly, nanowalled micro-hollows with an aspect ratio of 300 and a height of 15 µm are successfully produced . Secondly, micro- and nano-fluidics, including a hollow fluidic channel with a nanowall structure as a resonator and a fluidic capillary window as an optical modulator is proposed and demonstrated. Lastly, nanomechanical resonators consisting of a bridged nanobeam structure and a vertical nanomechanical capacitive resonator are fabricated and evaluated.Nguyen Van ToanTruong Thi Kim TuoiNaoki InomataMasaya TodaTakahito OnoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Nguyen Van Toan
Truong Thi Kim Tuoi
Naoki Inomata
Masaya Toda
Takahito Ono
Aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices
description Abstract This work reports investigation on the deposition and evaluation of an aluminum-doped zinc oxide (AZO) thin film and its novel applications to micro- and nano-devices. The AZO thin film is deposited successfully by atomic layer deposition (ALD). 50 nm-thick AZO film with high uniformity is checked by scanning electron microscopy. The element composition of the deposited film with various aluminum dopant concentration is analyzed by energy-dispersive X-ray spectroscopy. In addition, a polycrystalline feature of the deposited film is confirmed by selected area electron diffraction and high-resolution transmission electron microscopy. The lowest sheet resistance of the deposited AZO film is found at 0.7 kΩ/□ with the aluminum dopant concentration at 5 at.%. A novel method employed the ALD in combination with the sacrificial silicon structures is proposed which opens the way to create the ultra-high aspect ratio AZO structures. Moreover, based on this finding, three kinds of micro- and nano-devices employing the deposited AZO thin film have been proposed and demonstrated. Firstly, nanowalled micro-hollows with an aspect ratio of 300 and a height of 15 µm are successfully produced . Secondly, micro- and nano-fluidics, including a hollow fluidic channel with a nanowall structure as a resonator and a fluidic capillary window as an optical modulator is proposed and demonstrated. Lastly, nanomechanical resonators consisting of a bridged nanobeam structure and a vertical nanomechanical capacitive resonator are fabricated and evaluated.
format article
author Nguyen Van Toan
Truong Thi Kim Tuoi
Naoki Inomata
Masaya Toda
Takahito Ono
author_facet Nguyen Van Toan
Truong Thi Kim Tuoi
Naoki Inomata
Masaya Toda
Takahito Ono
author_sort Nguyen Van Toan
title Aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices
title_short Aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices
title_full Aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices
title_fullStr Aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices
title_full_unstemmed Aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices
title_sort aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/664e172638ba48c185347b76944afc38
work_keys_str_mv AT nguyenvantoan aluminumdopedzincoxidedepositedbyatomiclayerdepositionanditsapplicationstomicronanodevices
AT truongthikimtuoi aluminumdopedzincoxidedepositedbyatomiclayerdepositionanditsapplicationstomicronanodevices
AT naokiinomata aluminumdopedzincoxidedepositedbyatomiclayerdepositionanditsapplicationstomicronanodevices
AT masayatoda aluminumdopedzincoxidedepositedbyatomiclayerdepositionanditsapplicationstomicronanodevices
AT takahitoono aluminumdopedzincoxidedepositedbyatomiclayerdepositionanditsapplicationstomicronanodevices
_version_ 1718387329720123392