Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer

Electron optics in the solid state promises new functionality in electronics through the possibility of realizing nano- and micrometer-sized interferometers, lenses, collimators, and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrat...

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Autores principales:	Matija Karalic, Antonio Štrkalj, Michele Masseroni, Wei Chen, Christopher Mittag, Thomas Tschirky, Werner Wegscheider, Thomas Ihn, Klaus Ensslin, Oded Zilberberg
Formato:	article
Lenguaje:	EN
Publicado:	American Physical Society 2020
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/66ddd8e0c4b34f49a9b284c23abf3d13
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spelling	oai:doaj.org-article:66ddd8e0c4b34f49a9b284c23abf3d132021-12-02T11:41:11ZElectron-Hole Interference in an Inverted-Band Semiconductor Bilayer10.1103/PhysRevX.10.0310072160-3308https://doaj.org/article/66ddd8e0c4b34f49a9b284c23abf3d132020-07-01T00:00:00Zhttp://doi.org/10.1103/PhysRevX.10.031007http://doi.org/10.1103/PhysRevX.10.031007https://doaj.org/toc/2160-3308Electron optics in the solid state promises new functionality in electronics through the possibility of realizing nano- and micrometer-sized interferometers, lenses, collimators, and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Perot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics in two dimensions to encompass materials that exhibit band inversion and hybridization.Matija KaralicAntonio ŠtrkaljMichele MasseroniWei ChenChristopher MittagThomas TschirkyWerner WegscheiderThomas IhnKlaus EnsslinOded ZilberbergAmerican Physical SocietyarticlePhysicsQC1-999ENPhysical Review X, Vol 10, Iss 3, p 031007 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Matija Karalic Antonio Štrkalj Michele Masseroni Wei Chen Christopher Mittag Thomas Tschirky Werner Wegscheider Thomas Ihn Klaus Ensslin Oded Zilberberg Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
description	Electron optics in the solid state promises new functionality in electronics through the possibility of realizing nano- and micrometer-sized interferometers, lenses, collimators, and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Perot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics in two dimensions to encompass materials that exhibit band inversion and hybridization.
format	article
author	Matija Karalic Antonio Štrkalj Michele Masseroni Wei Chen Christopher Mittag Thomas Tschirky Werner Wegscheider Thomas Ihn Klaus Ensslin Oded Zilberberg
author_facet	Matija Karalic Antonio Štrkalj Michele Masseroni Wei Chen Christopher Mittag Thomas Tschirky Werner Wegscheider Thomas Ihn Klaus Ensslin Oded Zilberberg
author_sort	Matija Karalic
title	Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
title_short	Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
title_full	Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
title_fullStr	Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
title_full_unstemmed	Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
title_sort	electron-hole interference in an inverted-band semiconductor bilayer
publisher	American Physical Society
publishDate	2020
url	https://doaj.org/article/66ddd8e0c4b34f49a9b284c23abf3d13
work_keys_str_mv	AT matijakaralic electronholeinterferenceinaninvertedbandsemiconductorbilayer AT antoniostrkalj electronholeinterferenceinaninvertedbandsemiconductorbilayer AT michelemasseroni electronholeinterferenceinaninvertedbandsemiconductorbilayer AT weichen electronholeinterferenceinaninvertedbandsemiconductorbilayer AT christophermittag electronholeinterferenceinaninvertedbandsemiconductorbilayer AT thomastschirky electronholeinterferenceinaninvertedbandsemiconductorbilayer AT wernerwegscheider electronholeinterferenceinaninvertedbandsemiconductorbilayer AT thomasihn electronholeinterferenceinaninvertedbandsemiconductorbilayer AT klausensslin electronholeinterferenceinaninvertedbandsemiconductorbilayer AT odedzilberberg electronholeinterferenceinaninvertedbandsemiconductorbilayer
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Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer

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