From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces

Abstract Using spin-assisted ab initio random structure searches, we explore an exhaustive quantum phase diagram of archetypal interfaced Mott insulators, i.e. lanthanum-iron and lanthanum-titanium oxides. In particular, we report that the charge transfer induced by the interfacial electronic recons...

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Autores principales: Carla Lupo, Evan Sheridan, Edoardo Fertitta, David Dubbink, Chris J. Pickard, Cedric Weber
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/66e3fe62e5784fddb1c8cc923ee0c5e2
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spelling oai:doaj.org-article:66e3fe62e5784fddb1c8cc923ee0c5e22021-12-02T17:40:01ZFrom Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces10.1038/s41524-021-00563-z2057-3960https://doaj.org/article/66e3fe62e5784fddb1c8cc923ee0c5e22021-06-01T00:00:00Zhttps://doi.org/10.1038/s41524-021-00563-zhttps://doaj.org/toc/2057-3960Abstract Using spin-assisted ab initio random structure searches, we explore an exhaustive quantum phase diagram of archetypal interfaced Mott insulators, i.e. lanthanum-iron and lanthanum-titanium oxides. In particular, we report that the charge transfer induced by the interfacial electronic reconstruction stabilises a high-spin ferrous Fe2+ state. We provide a pathway to control the strength of correlation in this electronic state by tuning the epitaxial strain, yielding a manifold of quantum electronic phases, i.e. Mott-Hubbard, charge transfer and Slater insulating states. Furthermore, we report that the electronic correlations are closely related to the structural oxygen octahedral rotations, whose control is able to stabilise the low-spin state of Fe2+ at low pressure previously observed only under the extreme high pressure conditions in the Earth’s lower mantle. Thus, we provide avenues for magnetic switching via THz radiations which have crucial implications for next generation of spintronics technologies.Carla LupoEvan SheridanEdoardo FertittaDavid DubbinkChris J. PickardCedric WeberNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492Computer softwareQA76.75-76.765ENnpj Computational Materials, Vol 7, Iss 1, Pp 1-6 (2021)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
Computer software
QA76.75-76.765
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Computer software
QA76.75-76.765
Carla Lupo
Evan Sheridan
Edoardo Fertitta
David Dubbink
Chris J. Pickard
Cedric Weber
From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces
description Abstract Using spin-assisted ab initio random structure searches, we explore an exhaustive quantum phase diagram of archetypal interfaced Mott insulators, i.e. lanthanum-iron and lanthanum-titanium oxides. In particular, we report that the charge transfer induced by the interfacial electronic reconstruction stabilises a high-spin ferrous Fe2+ state. We provide a pathway to control the strength of correlation in this electronic state by tuning the epitaxial strain, yielding a manifold of quantum electronic phases, i.e. Mott-Hubbard, charge transfer and Slater insulating states. Furthermore, we report that the electronic correlations are closely related to the structural oxygen octahedral rotations, whose control is able to stabilise the low-spin state of Fe2+ at low pressure previously observed only under the extreme high pressure conditions in the Earth’s lower mantle. Thus, we provide avenues for magnetic switching via THz radiations which have crucial implications for next generation of spintronics technologies.
format article
author Carla Lupo
Evan Sheridan
Edoardo Fertitta
David Dubbink
Chris J. Pickard
Cedric Weber
author_facet Carla Lupo
Evan Sheridan
Edoardo Fertitta
David Dubbink
Chris J. Pickard
Cedric Weber
author_sort Carla Lupo
title From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces
title_short From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces
title_full From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces
title_fullStr From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces
title_full_unstemmed From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces
title_sort from slater to mott physics by epitaxially engineering electronic correlations in oxide interfaces
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/66e3fe62e5784fddb1c8cc923ee0c5e2
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