Luminescent properties of Sb-doped ZnSe single crystals

Photoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between 90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a maximum at 2.16 eV (575 nm) at r...

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Autores principales:	Suşchevici, Constantin, Goncearenco, Evghenii, Nedeoglo, Natalia, Nedeoglo, Dumitru
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2019
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/67201c4997704dcfb451a2128b8ef65f
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spelling	oai:doaj.org-article:67201c4997704dcfb451a2128b8ef65f2021-11-21T11:55:42ZLuminescent properties of Sb-doped ZnSe single crystals535.37+538.9552537-63651810-648Xhttps://doaj.org/article/67201c4997704dcfb451a2128b8ef65f2019-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2019/article/98827https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Photoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between 90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a maximum at 2.16 eV (575 nm) at room temperature is observed for the first time. A model of a (SbSeISe) acceptor center with the energy level located at 0.52 eV above the valence band edge is proposed, and the mechanism of the formation of this yellow PL band under direct and indirect excitation is discussed.Suşchevici, ConstantinGoncearenco, EvgheniiNedeoglo, NataliaNedeoglo, DumitruD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 18, Iss 1-4, Pp 26-30 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Suşchevici, Constantin Goncearenco, Evghenii Nedeoglo, Natalia Nedeoglo, Dumitru Luminescent properties of Sb-doped ZnSe single crystals
description	Photoluminescence (PL) spectra of ZnSe:0.1at%Sb single crystals are studied between 90 and 300 K. The samples are grown by the chemical vapor transport (CVT) method with iodine as a transport agent and doped with Sb impurity during the growth. A yellow PL band with a maximum at 2.16 eV (575 nm) at room temperature is observed for the first time. A model of a (SbSeISe) acceptor center with the energy level located at 0.52 eV above the valence band edge is proposed, and the mechanism of the formation of this yellow PL band under direct and indirect excitation is discussed.
format	article
author	Suşchevici, Constantin Goncearenco, Evghenii Nedeoglo, Natalia Nedeoglo, Dumitru
author_facet	Suşchevici, Constantin Goncearenco, Evghenii Nedeoglo, Natalia Nedeoglo, Dumitru
author_sort	Suşchevici, Constantin
title	Luminescent properties of Sb-doped ZnSe single crystals
title_short	Luminescent properties of Sb-doped ZnSe single crystals
title_full	Luminescent properties of Sb-doped ZnSe single crystals
title_fullStr	Luminescent properties of Sb-doped ZnSe single crystals
title_full_unstemmed	Luminescent properties of Sb-doped ZnSe single crystals
title_sort	luminescent properties of sb-doped znse single crystals
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2019
url	https://doaj.org/article/67201c4997704dcfb451a2128b8ef65f
work_keys_str_mv	AT suscheviciconstantin luminescentpropertiesofsbdopedznsesinglecrystals AT goncearencoevghenii luminescentpropertiesofsbdopedznsesinglecrystals AT nedeoglonatalia luminescentpropertiesofsbdopedznsesinglecrystals AT nedeoglodumitru luminescentpropertiesofsbdopedznsesinglecrystals
_version_	1718419368900034560

Luminescent properties of Sb-doped ZnSe single crystals

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