Valley phonons and exciton complexes in a monolayer semiconductor

In monolayer semiconductors phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone couple strongly to carriers’ spin and valley degree of freedom. Here, the authors report the observation of multiple valley phonons and the resulting exciton complexes in the monolayer s...

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Autores principales: Minhao He, Pasqual Rivera, Dinh Van Tuan, Nathan P. Wilson, Min Yang, Takashi Taniguchi, Kenji Watanabe, Jiaqiang Yan, David G. Mandrus, Hongyi Yu, Hanan Dery, Wang Yao, Xiaodong Xu
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Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/67b39c4efb5941eb807c5b3ca7b37699
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spelling oai:doaj.org-article:67b39c4efb5941eb807c5b3ca7b376992021-12-02T17:31:39ZValley phonons and exciton complexes in a monolayer semiconductor10.1038/s41467-020-14472-02041-1723https://doaj.org/article/67b39c4efb5941eb807c5b3ca7b376992020-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-14472-0https://doaj.org/toc/2041-1723In monolayer semiconductors phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone couple strongly to carriers’ spin and valley degree of freedom. Here, the authors report the observation of multiple valley phonons and the resulting exciton complexes in the monolayer semiconductor WSe2.Minhao HePasqual RiveraDinh Van TuanNathan P. WilsonMin YangTakashi TaniguchiKenji WatanabeJiaqiang YanDavid G. MandrusHongyi YuHanan DeryWang YaoXiaodong XuNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Minhao He
Pasqual Rivera
Dinh Van Tuan
Nathan P. Wilson
Min Yang
Takashi Taniguchi
Kenji Watanabe
Jiaqiang Yan
David G. Mandrus
Hongyi Yu
Hanan Dery
Wang Yao
Xiaodong Xu
Valley phonons and exciton complexes in a monolayer semiconductor
description In monolayer semiconductors phonons with momentum vectors pointing to the corners of the hexagonal Brillouin zone couple strongly to carriers’ spin and valley degree of freedom. Here, the authors report the observation of multiple valley phonons and the resulting exciton complexes in the monolayer semiconductor WSe2.
format article
author Minhao He
Pasqual Rivera
Dinh Van Tuan
Nathan P. Wilson
Min Yang
Takashi Taniguchi
Kenji Watanabe
Jiaqiang Yan
David G. Mandrus
Hongyi Yu
Hanan Dery
Wang Yao
Xiaodong Xu
author_facet Minhao He
Pasqual Rivera
Dinh Van Tuan
Nathan P. Wilson
Min Yang
Takashi Taniguchi
Kenji Watanabe
Jiaqiang Yan
David G. Mandrus
Hongyi Yu
Hanan Dery
Wang Yao
Xiaodong Xu
author_sort Minhao He
title Valley phonons and exciton complexes in a monolayer semiconductor
title_short Valley phonons and exciton complexes in a monolayer semiconductor
title_full Valley phonons and exciton complexes in a monolayer semiconductor
title_fullStr Valley phonons and exciton complexes in a monolayer semiconductor
title_full_unstemmed Valley phonons and exciton complexes in a monolayer semiconductor
title_sort valley phonons and exciton complexes in a monolayer semiconductor
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/67b39c4efb5941eb807c5b3ca7b37699
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