The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

Abstract We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer lay...

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Autores principales:	Moonsang Lee, Dmitry Mikulik, Mino Yang, Sungsoo Park
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/687ab734b7e74af18075b496f4e2a620
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spelling	oai:doaj.org-article:687ab734b7e74af18075b496f4e2a6202021-12-02T12:31:46ZThe investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE10.1038/s41598-017-08905-y2045-2322https://doaj.org/article/687ab734b7e74af18075b496f4e2a6202017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-08905-yhttps://doaj.org/toc/2045-2322Abstract We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.Moonsang LeeDmitry MikulikMino YangSungsoo ParkNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Moonsang Lee Dmitry Mikulik Mino Yang Sungsoo Park The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
description	Abstract We investigate the stress evolution of 400 µm-thick freestanding GaN crystals grown from Si substrates by hydride vapour phase epitaxy (HVPE) and the in situ removal of Si substrates. The stress generated in growing GaN can be tuned by varying the thickness of the MOCVD AlGaN/AlN buffer layers. Micro Raman analysis shows the presence of slight tensile stress in the freestanding GaN crystals and no stress accumulation in HVPE GaN layers during the growth. Additionally, it is demonstrated that the residual tensile stress in HVPE GaN is caused only by elastic stress arising from the crystal quality difference between Ga- and N-face GaN. TEM analysis revealed that the dislocations in freestanding GaN crystals have high inclination angles that are attributed to the stress relaxation of the crystals. We believe that the understanding and characterization on the structural properties of the freestanding GaN crystals will help us to use these crystals for high-performance opto-electronic devices.
format	article
author	Moonsang Lee Dmitry Mikulik Mino Yang Sungsoo Park
author_facet	Moonsang Lee Dmitry Mikulik Mino Yang Sungsoo Park
author_sort	Moonsang Lee
title	The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
title_short	The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
title_full	The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
title_fullStr	The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
title_full_unstemmed	The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
title_sort	investigation of stress in freestanding gan crystals grown from si substrates by hvpe
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/687ab734b7e74af18075b496f4e2a620
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The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

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