Achieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)
TENG suffers from two fundamental limitations: high output impedance and low charge transfer. Herein, these limitations are circumvented by leveraging the opposite-charge-enhancement effect and transistor-like device design, thereby achieving the instantaneous power density over 10 MW/m2 at the low...
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Autores principales: | , , , |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/68958ce90a414228b3065336a85fe73f |
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Sumario: | TENG suffers from two fundamental limitations: high output impedance and low charge transfer. Herein, these limitations are circumvented by leveraging the opposite-charge-enhancement effect and transistor-like device design, thereby achieving the instantaneous power density over 10 MW/m2 at the low frequency of ~ 1 Hz. |
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