Achieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)

TENG suffers from two fundamental limitations: high output impedance and low charge transfer. Herein, these limitations are circumvented by leveraging the opposite-charge-enhancement effect and transistor-like device design, thereby achieving the instantaneous power density over 10 MW/m2 at the low...

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Autores principales: Hao Wu, Steven Wang, Zuankai Wang, Yunlong Zi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/68958ce90a414228b3065336a85fe73f
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spelling oai:doaj.org-article:68958ce90a414228b3065336a85fe73f2021-12-02T18:02:07ZAchieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)10.1038/s41467-021-25753-72041-1723https://doaj.org/article/68958ce90a414228b3065336a85fe73f2021-09-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-25753-7https://doaj.org/toc/2041-1723TENG suffers from two fundamental limitations: high output impedance and low charge transfer. Herein, these limitations are circumvented by leveraging the opposite-charge-enhancement effect and transistor-like device design, thereby achieving the instantaneous power density over 10 MW/m2 at the low frequency of ~ 1 Hz.Hao WuSteven WangZuankai WangYunlong ZiNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
Hao Wu
Steven Wang
Zuankai Wang
Yunlong Zi
Achieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)
description TENG suffers from two fundamental limitations: high output impedance and low charge transfer. Herein, these limitations are circumvented by leveraging the opposite-charge-enhancement effect and transistor-like device design, thereby achieving the instantaneous power density over 10 MW/m2 at the low frequency of ~ 1 Hz.
format article
author Hao Wu
Steven Wang
Zuankai Wang
Yunlong Zi
author_facet Hao Wu
Steven Wang
Zuankai Wang
Yunlong Zi
author_sort Hao Wu
title Achieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)
title_short Achieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)
title_full Achieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)
title_fullStr Achieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)
title_full_unstemmed Achieving ultrahigh instantaneous power density of 10 MW/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (OCT-TENG)
title_sort achieving ultrahigh instantaneous power density of 10 mw/m2 by leveraging the opposite-charge-enhanced transistor-like triboelectric nanogenerator (oct-teng)
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/68958ce90a414228b3065336a85fe73f
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AT stevenwang achievingultrahighinstantaneouspowerdensityof10mwm2byleveragingtheoppositechargeenhancedtransistorliketriboelectricnanogeneratoroctteng
AT zuankaiwang achievingultrahighinstantaneouspowerdensityof10mwm2byleveragingtheoppositechargeenhancedtransistorliketriboelectricnanogeneratoroctteng
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