Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries

Grain boundaries can degrade the performance of electronic devices made from single atomic layers of transition metal dichalcogenides. Here, the authors combine transport measurements and transmission electron microscopy to find a correlation between field-effect mobility and grain misorientation an...

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Auteurs principaux: Thuc Hue Ly, David J. Perello, Jiong Zhao, Qingming Deng, Hyun Kim, Gang Hee Han, Sang Hoon Chae, Hye Yun Jeong, Young Hee Lee
Format: article
Langue:EN
Publié: Nature Portfolio 2016
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Accès en ligne:https://doaj.org/article/689dd66d07eb425aa63b1656d2d5c61d
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Résumé:Grain boundaries can degrade the performance of electronic devices made from single atomic layers of transition metal dichalcogenides. Here, the authors combine transport measurements and transmission electron microscopy to find a correlation between field-effect mobility and grain misorientation angle.