Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias

1T-TaS2 is a 2D quantum material supporting charge density waves (CDWs) at room temperature. The strong correlations in this material make its electrical properties extremely sensitive to external stimuli such as an electrical bias and illumination. Recently, we demonstrated that the optical propert...

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Autores principales:	Weijian Li, Gururaj V. Naik
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Biotechnology TP248.13-248.65 Physics QC1-999
Acceso en línea:	https://doaj.org/article/689f5c007f3c4470bc4b1cd519a8bd06
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spelling	oai:doaj.org-article:689f5c007f3c4470bc4b1cd519a8bd062021-12-01T18:51:23ZReorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias2166-532X10.1063/5.0069855https://doaj.org/article/689f5c007f3c4470bc4b1cd519a8bd062021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0069855https://doaj.org/toc/2166-532X1T-TaS2 is a 2D quantum material supporting charge density waves (CDWs) at room temperature. The strong correlations in this material make its electrical properties extremely sensitive to external stimuli such as an electrical bias and illumination. Recently, we demonstrated that the optical properties of this material also considerably change with electrical bias and light. With light, we showed that the CDW domains across layers stack differently and thus result in a unity-order change in the refractive index. Here, we demonstrate that an in-plane electrical bias also changes the CDW stacking in 1T-TaS2. However, the stacking change with electrical bias opposes that with illumination. Our experiments at room temperature suggest that an in-plane electrical bias sets the CDWs sliding and making way for the higher energy stacking configurations to switch to the ground-state stacking. The demonstration here sheds light on the origin of the giant electro-optical effect previously observed in 1T-TaS2 and paves the way for low-power MHz-fast electrically tunable optical devices.Weijian LiGururaj V. NaikAIP Publishing LLCarticleBiotechnologyTP248.13-248.65PhysicsQC1-999ENAPL Materials, Vol 9, Iss 11, Pp 111103-111103-4 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biotechnology TP248.13-248.65 Physics QC1-999
spellingShingle	Biotechnology TP248.13-248.65 Physics QC1-999 Weijian Li Gururaj V. Naik Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias
description	1T-TaS2 is a 2D quantum material supporting charge density waves (CDWs) at room temperature. The strong correlations in this material make its electrical properties extremely sensitive to external stimuli such as an electrical bias and illumination. Recently, we demonstrated that the optical properties of this material also considerably change with electrical bias and light. With light, we showed that the CDW domains across layers stack differently and thus result in a unity-order change in the refractive index. Here, we demonstrate that an in-plane electrical bias also changes the CDW stacking in 1T-TaS2. However, the stacking change with electrical bias opposes that with illumination. Our experiments at room temperature suggest that an in-plane electrical bias sets the CDWs sliding and making way for the higher energy stacking configurations to switch to the ground-state stacking. The demonstration here sheds light on the origin of the giant electro-optical effect previously observed in 1T-TaS2 and paves the way for low-power MHz-fast electrically tunable optical devices.
format	article
author	Weijian Li Gururaj V. Naik
author_facet	Weijian Li Gururaj V. Naik
author_sort	Weijian Li
title	Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias
title_short	Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias
title_full	Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias
title_fullStr	Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias
title_full_unstemmed	Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias
title_sort	reorganization of cdw stacking in 1t-tas2 by an in-plane electrical bias
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/689f5c007f3c4470bc4b1cd519a8bd06
work_keys_str_mv	AT weijianli reorganizationofcdwstackingin1ttas2byaninplaneelectricalbias AT gururajvnaik reorganizationofcdwstackingin1ttas2byaninplaneelectricalbias
_version_	1718404696161386496

Reorganization of CDW stacking in 1T-TaS2 by an in-plane electrical bias

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