Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects. Here, the authors show that Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman technique might overcome this hurdle.
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| Auteurs principaux: | , , , , , , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2016
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/68c62d1dffae4a1abd342b8b27ba139f |
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| Résumé: | An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects. Here, the authors show that Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman technique might overcome this hurdle. |
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