Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects. Here, the authors show that Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman technique might overcome this hurdle.

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Autores principales:	S. K. Kushwaha, I. Pletikosić, T. Liang, A. Gyenis, S. H. Lapidus, Yao Tian, He Zhao, K. S. Burch, Jingjing Lin, Wudi Wang, Huiwen Ji, A. V. Fedorov, Ali Yazdani, N. P. Ong, T. Valla, R. J. Cava
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/68c62d1dffae4a1abd342b8b27ba139f
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spelling	oai:doaj.org-article:68c62d1dffae4a1abd342b8b27ba139f2021-12-02T14:39:48ZSn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties10.1038/ncomms114562041-1723https://doaj.org/article/68c62d1dffae4a1abd342b8b27ba139f2016-04-01T00:00:00Zhttps://doi.org/10.1038/ncomms11456https://doaj.org/toc/2041-1723An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects. Here, the authors show that Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman technique might overcome this hurdle.S. K. KushwahaI. PletikosićT. LiangA. GyenisS. H. LapidusYao TianHe ZhaoK. S. BurchJingjing LinWudi WangHuiwen JiA. V. FedorovAli YazdaniN. P. OngT. VallaR. J. CavaNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-9 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q S. K. Kushwaha I. Pletikosić T. Liang A. Gyenis S. H. Lapidus Yao Tian He Zhao K. S. Burch Jingjing Lin Wudi Wang Huiwen Ji A. V. Fedorov Ali Yazdani N. P. Ong T. Valla R. J. Cava Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
description	An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects. Here, the authors show that Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman technique might overcome this hurdle.
format	article
author	S. K. Kushwaha I. Pletikosić T. Liang A. Gyenis S. H. Lapidus Yao Tian He Zhao K. S. Burch Jingjing Lin Wudi Wang Huiwen Ji A. V. Fedorov Ali Yazdani N. P. Ong T. Valla R. J. Cava
author_facet	S. K. Kushwaha I. Pletikosić T. Liang A. Gyenis S. H. Lapidus Yao Tian He Zhao K. S. Burch Jingjing Lin Wudi Wang Huiwen Ji A. V. Fedorov Ali Yazdani N. P. Ong T. Valla R. J. Cava
author_sort	S. K. Kushwaha
title	Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
title_short	Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
title_full	Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
title_fullStr	Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
title_full_unstemmed	Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties
title_sort	sn-doped bi1.1sb0.9te2s bulk crystal topological insulator with excellent properties
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/68c62d1dffae4a1abd342b8b27ba139f
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Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

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