Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects. Here, the authors show that Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman technique might overcome this hurdle.

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Auteurs principaux: S. K. Kushwaha, I. Pletikosić, T. Liang, A. Gyenis, S. H. Lapidus, Yao Tian, He Zhao, K. S. Burch, Jingjing Lin, Wudi Wang, Huiwen Ji, A. V. Fedorov, Ali Yazdani, N. P. Ong, T. Valla, R. J. Cava
Format: article
Langue:EN
Publié: Nature Portfolio 2016
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Science
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Accès en ligne:https://doaj.org/article/68c62d1dffae4a1abd342b8b27ba139f
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https://doaj.org/article/68c62d1dffae4a1abd342b8b27ba139f

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