Ferroelectricity in novel one-dimensional P42-InSeI nanowires

With the increasing demands for the miniaturization of ferroelectricity-enabled electronic devices, it is highly desirable that the ferroelectricity would exist in low-dimensional materials. However, those ferroelectrics, especially one-dimensional (1D) ones, are still limited. Herein, based on the...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Shujuan Jiang, Siyuan Liu, Yi Wang, Weizhen Chen, Huabing Yin, Bing Wang, Chang Liu, Zhenzhen Feng, Guang-Ping Zheng
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Ferroelectricity One-dimensional material First-principles calculations Polarization reversal InSeI nanowires Physics QC1-999
Acceso en línea:	https://doaj.org/article/691bbacc9200458da923356f96e6b7d7
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:691bbacc9200458da923356f96e6b7d7
record_format	dspace
spelling	oai:doaj.org-article:691bbacc9200458da923356f96e6b7d72021-11-04T04:30:03ZFerroelectricity in novel one-dimensional P42-InSeI nanowires2211-379710.1016/j.rinp.2021.104960https://doaj.org/article/691bbacc9200458da923356f96e6b7d72021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2211379721009773https://doaj.org/toc/2211-3797With the increasing demands for the miniaturization of ferroelectricity-enabled electronic devices, it is highly desirable that the ferroelectricity would exist in low-dimensional materials. However, those ferroelectrics, especially one-dimensional (1D) ones, are still limited. Herein, based on the first-principles calculations, 1D ferroelectricity in novel InSeI nanowires with noncentrosymmetric P42 space group is explored, which could possess three different paths for the reversal of electric polarization. The minimum energy barrier of 97 meV/f.u. for the polarization reversal, comparable with those of other low-dimensional ferroelectrics, could be achieved through a unique four-step concerted process. According to ab initio molecular dynamics simulations, the Curie temperature of the proposed P42-InSeI nanowires is estimated to about 866 K, above room temperature. The electronic structure and carrier mobility of the nanowires are also studied, demonstrating that they could be promising materials in nanoelectronics such as high-density nonvolatile memories due to their stable array structures formed by van der Waals interactions.Shujuan JiangSiyuan LiuYi WangWeizhen ChenHuabing YinBing WangChang LiuZhenzhen FengGuang-Ping ZhengElsevierarticleFerroelectricityOne-dimensional materialFirst-principles calculationsPolarization reversalInSeI nanowiresPhysicsQC1-999ENResults in Physics, Vol 31, Iss , Pp 104960- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Ferroelectricity One-dimensional material First-principles calculations Polarization reversal InSeI nanowires Physics QC1-999
spellingShingle	Ferroelectricity One-dimensional material First-principles calculations Polarization reversal InSeI nanowires Physics QC1-999 Shujuan Jiang Siyuan Liu Yi Wang Weizhen Chen Huabing Yin Bing Wang Chang Liu Zhenzhen Feng Guang-Ping Zheng Ferroelectricity in novel one-dimensional P42-InSeI nanowires
description	With the increasing demands for the miniaturization of ferroelectricity-enabled electronic devices, it is highly desirable that the ferroelectricity would exist in low-dimensional materials. However, those ferroelectrics, especially one-dimensional (1D) ones, are still limited. Herein, based on the first-principles calculations, 1D ferroelectricity in novel InSeI nanowires with noncentrosymmetric P42 space group is explored, which could possess three different paths for the reversal of electric polarization. The minimum energy barrier of 97 meV/f.u. for the polarization reversal, comparable with those of other low-dimensional ferroelectrics, could be achieved through a unique four-step concerted process. According to ab initio molecular dynamics simulations, the Curie temperature of the proposed P42-InSeI nanowires is estimated to about 866 K, above room temperature. The electronic structure and carrier mobility of the nanowires are also studied, demonstrating that they could be promising materials in nanoelectronics such as high-density nonvolatile memories due to their stable array structures formed by van der Waals interactions.
format	article
author	Shujuan Jiang Siyuan Liu Yi Wang Weizhen Chen Huabing Yin Bing Wang Chang Liu Zhenzhen Feng Guang-Ping Zheng
author_facet	Shujuan Jiang Siyuan Liu Yi Wang Weizhen Chen Huabing Yin Bing Wang Chang Liu Zhenzhen Feng Guang-Ping Zheng
author_sort	Shujuan Jiang
title	Ferroelectricity in novel one-dimensional P42-InSeI nanowires
title_short	Ferroelectricity in novel one-dimensional P42-InSeI nanowires
title_full	Ferroelectricity in novel one-dimensional P42-InSeI nanowires
title_fullStr	Ferroelectricity in novel one-dimensional P42-InSeI nanowires
title_full_unstemmed	Ferroelectricity in novel one-dimensional P42-InSeI nanowires
title_sort	ferroelectricity in novel one-dimensional p42-insei nanowires
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/691bbacc9200458da923356f96e6b7d7
work_keys_str_mv	AT shujuanjiang ferroelectricityinnovelonedimensionalp42inseinanowires AT siyuanliu ferroelectricityinnovelonedimensionalp42inseinanowires AT yiwang ferroelectricityinnovelonedimensionalp42inseinanowires AT weizhenchen ferroelectricityinnovelonedimensionalp42inseinanowires AT huabingyin ferroelectricityinnovelonedimensionalp42inseinanowires AT bingwang ferroelectricityinnovelonedimensionalp42inseinanowires AT changliu ferroelectricityinnovelonedimensionalp42inseinanowires AT zhenzhenfeng ferroelectricityinnovelonedimensionalp42inseinanowires AT guangpingzheng ferroelectricityinnovelonedimensionalp42inseinanowires
_version_	1718445277678927872

Ferroelectricity in novel one-dimensional P42-InSeI nanowires

Ejemplares similares