Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
Nature Communications 6, Article number: 7809 (2015); Published 30 July 2015; Updated 28 January 2016 In Fig. 3 of this article, there are a number of errors in the colours used for the data points and curves. In Fig. 3b, the blue data should be green, referring to a thickness of ‘3.5 nm’, and the g...
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oai:doaj.org-article:691cf1f768a14acd8f52c8545b65ea202021-12-02T15:35:44ZCorrection: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering10.1038/ncomms104282041-1723https://doaj.org/article/691cf1f768a14acd8f52c8545b65ea202016-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms10428https://doaj.org/toc/2041-1723Nature Communications 6, Article number: 7809 (2015); Published 30 July 2015; Updated 28 January 2016 In Fig. 3 of this article, there are a number of errors in the colours used for the data points and curves. In Fig. 3b, the blue data should be green, referring to a thickness of ‘3.5 nm’, and the green data should be blue, referring to a thickness of ‘8 nm’.David J. PerelloSang Hoon ChaeSeunghyun SongYoung Hee LeeNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-2 (2016) |
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Science Q David J. Perello Sang Hoon Chae Seunghyun Song Young Hee Lee Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
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Nature Communications 6, Article number: 7809 (2015); Published 30 July 2015; Updated 28 January 2016 In Fig. 3 of this article, there are a number of errors in the colours used for the data points and curves. In Fig. 3b, the blue data should be green, referring to a thickness of ‘3.5 nm’, and the green data should be blue, referring to a thickness of ‘8 nm’. |
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article |
author |
David J. Perello Sang Hoon Chae Seunghyun Song Young Hee Lee |
author_facet |
David J. Perello Sang Hoon Chae Seunghyun Song Young Hee Lee |
author_sort |
David J. Perello |
title |
Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
title_short |
Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
title_full |
Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
title_fullStr |
Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
title_full_unstemmed |
Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
title_sort |
correction: corrigendum: high-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering |
publisher |
Nature Portfolio |
publishDate |
2016 |
url |
https://doaj.org/article/691cf1f768a14acd8f52c8545b65ea20 |
work_keys_str_mv |
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