Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering
Nature Communications 6, Article number: 7809 (2015); Published 30 July 2015; Updated 28 January 2016 In Fig. 3 of this article, there are a number of errors in the colours used for the data points and curves. In Fig. 3b, the blue data should be green, referring to a thickness of ‘3.5 nm’, and the g...
Guardado en:
Autores principales: | David J. Perello, Sang Hoon Chae, Seunghyun Song, Young Hee Lee |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
|
Materias: | |
Acceso en línea: | https://doaj.org/article/691cf1f768a14acd8f52c8545b65ea20 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
por: Ashish V. Penumatcha, et al.
Publicado: (2016) -
Impact ionization by hot carriers in a black phosphorus field effect transistor
por: Faisal Ahmed, et al.
Publicado: (2018) -
Highly-stable black phosphorus field-effect transistors with low density of oxide traps
por: Yu. Yu. Illarionov, et al.
Publicado: (2017) -
Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness [Corrigendum]
por: Dai C, et al.
Publicado: (2020) -
Superlubricity under ultrahigh contact pressure enabled by partially oxidized black phosphorus nanosheets
por: Xiaoyong Ren, et al.
Publicado: (2021)