Specific features of optic qualities of Hg1-xMnxTe and Hg1-x-yCdxMnyTe semimagnetic materials with narrow GAP compared with Hg1-xCdxTe nonmagnetic semiconductor

In the present work we study the basic laws of component distribution distribution on the epitaxial layer geometry of Hg Mn Te, Hg Cd Te and Hg Cd Mn Te using the micro-X-ray-structural method and the optic method. A curve of standardization was constructed, using the energy band from the experime...

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Autores principales: Gheorghiţă, Eugen, Guţuleac, Leonid, Postolachi, Igor, Untilă, Pantelei
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
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Acceso en línea:https://doaj.org/article/698286f6210b4bafb8542cc6f59f42da
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Sumario:In the present work we study the basic laws of component distribution distribution on the epitaxial layer geometry of Hg Mn Te, Hg Cd Te and Hg Cd Mn Te using the micro-X-ray-structural method and the optic method. A curve of standardization was constructed, using the energy band from the experiment to determine the concentration of cadmium and manganese. Analyzing the absorption spectra structure it was determined that in the absence of external magnetic field the energy spectra of the charge carriers of the Hg Mn Te and Hg Cd Mn Te semimagnetic materials and of Hg Cd Te nonmagnetic material with the same energy gap have the same form. The theoretical calculations of absorbtion spectra were realized within the Kane model with its non-parabolic perturbations specific for indium antimonide as the narrow-gap semiconductor.