Electrochemical nanostructuring of CuInSe2 bulk crystals

We show that chalcopyrite CuInSe2 crystals can be nanostructured by electrochemical treatment in an aqueous HCl solution. To make the crystals suitable for electrochemical nanostructuring, they are subjected to thermal treatment either in vacuum or in Zn vapors. The morphology of the produced materi...

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Autor principal:	Ursachi, Veaceslav
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/699609d2a12a49bd9d2228d57d6107f9
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spelling	oai:doaj.org-article:699609d2a12a49bd9d2228d57d6107f92021-11-21T12:00:49ZElectrochemical nanostructuring of CuInSe2 bulk crystals2537-63651810-648Xhttps://doaj.org/article/699609d2a12a49bd9d2228d57d6107f92012-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/22420https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365We show that chalcopyrite CuInSe2 crystals can be nanostructured by electrochemical treatment in an aqueous HCl solution. To make the crystals suitable for electrochemical nanostructuring, they are subjected to thermal treatment either in vacuum or in Zn vapors. The morphology of the produced material and the diameter of pores are found to be a function of the resistivity of the samples attained after thermal treatment. The pore diameter can vary in a range of 100 nm to 1 μm. The influence of thermal treatment and electrochemical etching on the photoluminescence spectra is analyzed.Ursachi, VeaceslavD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 4, Pp 312-318 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Ursachi, Veaceslav Electrochemical nanostructuring of CuInSe2 bulk crystals
description	We show that chalcopyrite CuInSe2 crystals can be nanostructured by electrochemical treatment in an aqueous HCl solution. To make the crystals suitable for electrochemical nanostructuring, they are subjected to thermal treatment either in vacuum or in Zn vapors. The morphology of the produced material and the diameter of pores are found to be a function of the resistivity of the samples attained after thermal treatment. The pore diameter can vary in a range of 100 nm to 1 μm. The influence of thermal treatment and electrochemical etching on the photoluminescence spectra is analyzed.
format	article
author	Ursachi, Veaceslav
author_facet	Ursachi, Veaceslav
author_sort	Ursachi, Veaceslav
title	Electrochemical nanostructuring of CuInSe2 bulk crystals
title_short	Electrochemical nanostructuring of CuInSe2 bulk crystals
title_full	Electrochemical nanostructuring of CuInSe2 bulk crystals
title_fullStr	Electrochemical nanostructuring of CuInSe2 bulk crystals
title_full_unstemmed	Electrochemical nanostructuring of CuInSe2 bulk crystals
title_sort	electrochemical nanostructuring of cuinse2 bulk crystals
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2012
url	https://doaj.org/article/699609d2a12a49bd9d2228d57d6107f9
work_keys_str_mv	AT ursachiveaceslav electrochemicalnanostructuringofcuinse2bulkcrystals
_version_	1718419310111621120

Electrochemical nanostructuring of CuInSe2 bulk crystals

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