Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasm...

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Autores principales:	Kira L. Enisherlova, Lev A. Seidman, Ella M. Temper, Yuliy A. Kontsevoy
Formato:	article
Lenguaje:	EN
Publicado:	Pensoft Publishers 2021
Materias:	Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/69a7427afc664f4f8b01da72c984ae42
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spelling	oai:doaj.org-article:69a7427afc664f4f8b01da72c984ae422021-11-24T04:30:50ZEffect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures10.3897/j.moem.7.2.732932452-1779https://doaj.org/article/69a7427afc664f4f8b01da72c984ae422021-06-01T00:00:00Zhttps://moem.pensoft.net/article/73293/download/pdf/https://moem.pensoft.net/article/73293/download/xml/https://moem.pensoft.net/article/73293/https://doaj.org/toc/2452-1779The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed charge in the structures although the I–V curves of the structures exhibit current oscillations. Information has been reported on the effect of PECVD process mode on current oscillation parameters, e.g. period and amplitude, and length of I–V curve section in which oscillations occur. Possible explanation of these oscillations has been suggested. Additional nitrogen plasma treatment of heterostructure surface before monosilane supply to the chamber changes the magnitude and sign of fixed charge and reduces the free carrier concentration in the 2D gas channel of SiNx/АlGaN/GaN heterostructures. Experimental evidence has been provided for the effect of PECVD process parameters and surface preparation on the electrical parameters of the heterostructures grown.Kira L. EnisherlovaLev A. SeidmanElla M. TemperYuliy A. KontsevoyPensoft PublishersarticleElectronicsTK7800-8360ENModern Electronic Materials, Vol 7, Iss 2, Pp 63-71 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Electronics TK7800-8360
spellingShingle	Electronics TK7800-8360 Kira L. Enisherlova Lev A. Seidman Ella M. Temper Yuliy A. Kontsevoy Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures
description	The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed charge in the structures although the I–V curves of the structures exhibit current oscillations. Information has been reported on the effect of PECVD process mode on current oscillation parameters, e.g. period and amplitude, and length of I–V curve section in which oscillations occur. Possible explanation of these oscillations has been suggested. Additional nitrogen plasma treatment of heterostructure surface before monosilane supply to the chamber changes the magnitude and sign of fixed charge and reduces the free carrier concentration in the 2D gas channel of SiNx/АlGaN/GaN heterostructures. Experimental evidence has been provided for the effect of PECVD process parameters and surface preparation on the electrical parameters of the heterostructures grown.
format	article
author	Kira L. Enisherlova Lev A. Seidman Ella M. Temper Yuliy A. Kontsevoy
author_facet	Kira L. Enisherlova Lev A. Seidman Ella M. Temper Yuliy A. Kontsevoy
author_sort	Kira L. Enisherlova
title	Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures
title_short	Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures
title_full	Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures
title_fullStr	Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures
title_full_unstemmed	Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures
title_sort	effect of pecvd sinx deposition process parameters on electrical properties of sinx/algan/gan structures
publisher	Pensoft Publishers
publishDate	2021
url	https://doaj.org/article/69a7427afc664f4f8b01da72c984ae42
work_keys_str_mv	AT kiralenisherlova effectofpecvdsinxdepositionprocessparametersonelectricalpropertiesofsinxalganganstructures AT levaseidman effectofpecvdsinxdepositionprocessparametersonelectricalpropertiesofsinxalganganstructures AT ellamtemper effectofpecvdsinxdepositionprocessparametersonelectricalpropertiesofsinxalganganstructures AT yuliyakontsevoy effectofpecvdsinxdepositionprocessparametersonelectricalpropertiesofsinxalganganstructures
_version_	1718415980616482816

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

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