Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures
The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasm...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Pensoft Publishers
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/69a7427afc664f4f8b01da72c984ae42 |
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