Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates

Liquid substrates are great candidates for the growth of high-quality graphene using chemical vapour deposition (CVD) due to their atomically flat and defect free surfaces. A detailed study of graphene growth using atmospheric pressure CVD (APCVD) on liquid indium (In) was conducted. It was found th...

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Autores principales:	Maryam A. Saeed, Ian A. Kinloch, Brian Derby
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	2D materials graphene diffusion and growth adsorption/desorption solubility Chemical technology TP1-1185 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/6aabfc3ef8a442db90bee47568665dea
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spelling	oai:doaj.org-article:6aabfc3ef8a442db90bee47568665dea2021-11-25T17:05:49ZAtmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates10.3390/catal111113182073-4344https://doaj.org/article/6aabfc3ef8a442db90bee47568665dea2021-10-01T00:00:00Zhttps://www.mdpi.com/2073-4344/11/11/1318https://doaj.org/toc/2073-4344Liquid substrates are great candidates for the growth of high-quality graphene using chemical vapour deposition (CVD) due to their atomically flat and defect free surfaces. A detailed study of graphene growth using atmospheric pressure CVD (APCVD) on liquid indium (In) was conducted. It was found that the effect of the growth parameters on the quality of the graphene produced is highly dependent on the properties of the substrate used. A short residence time of 6.8 sec for the reactive gases led to a high graphene quality, indicating the good catalytic behaviour of In. The role of hydrogen partial pressure was found to be crucial, with monolayer and bilayer graphene films with a low defect density obtained at low P<sub>H2</sub> (38.6 mbar), whilst more defective, thicker graphene films with a partial coverage being obtained at high P<sub>H2</sub> (74.3 mbar). The graphene deposition was insensitive to growth time as the graphene growth on liquid In was found to self-limit to bilayer. For further investigation, five compositions of Cu-In alloys were made by arc-melting. Graphene was then grown using the optimum conditions for In and the quality of the graphene was found to degrade with increasing Cu wt.%. This work will aid the future optimisation of the growth conditions based upon the substrate’s properties.Maryam A. SaeedIan A. KinlochBrian DerbyMDPI AGarticle2D materialsgraphenediffusion and growthadsorption/desorptionsolubilityChemical technologyTP1-1185ChemistryQD1-999ENCatalysts, Vol 11, Iss 1318, p 1318 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	2D materials graphene diffusion and growth adsorption/desorption solubility Chemical technology TP1-1185 Chemistry QD1-999
spellingShingle	2D materials graphene diffusion and growth adsorption/desorption solubility Chemical technology TP1-1185 Chemistry QD1-999 Maryam A. Saeed Ian A. Kinloch Brian Derby Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates
description	Liquid substrates are great candidates for the growth of high-quality graphene using chemical vapour deposition (CVD) due to their atomically flat and defect free surfaces. A detailed study of graphene growth using atmospheric pressure CVD (APCVD) on liquid indium (In) was conducted. It was found that the effect of the growth parameters on the quality of the graphene produced is highly dependent on the properties of the substrate used. A short residence time of 6.8 sec for the reactive gases led to a high graphene quality, indicating the good catalytic behaviour of In. The role of hydrogen partial pressure was found to be crucial, with monolayer and bilayer graphene films with a low defect density obtained at low P<sub>H2</sub> (38.6 mbar), whilst more defective, thicker graphene films with a partial coverage being obtained at high P<sub>H2</sub> (74.3 mbar). The graphene deposition was insensitive to growth time as the graphene growth on liquid In was found to self-limit to bilayer. For further investigation, five compositions of Cu-In alloys were made by arc-melting. Graphene was then grown using the optimum conditions for In and the quality of the graphene was found to degrade with increasing Cu wt.%. This work will aid the future optimisation of the growth conditions based upon the substrate’s properties.
format	article
author	Maryam A. Saeed Ian A. Kinloch Brian Derby
author_facet	Maryam A. Saeed Ian A. Kinloch Brian Derby
author_sort	Maryam A. Saeed
title	Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates
title_short	Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates
title_full	Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates
title_fullStr	Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates
title_full_unstemmed	Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates
title_sort	atmospheric pressure catalytic vapor deposition of graphene on liquid in and cu-in alloy substrates
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/6aabfc3ef8a442db90bee47568665dea
work_keys_str_mv	AT maryamasaeed atmosphericpressurecatalyticvapordepositionofgrapheneonliquidinandcuinalloysubstrates AT ianakinloch atmosphericpressurecatalyticvapordepositionofgrapheneonliquidinandcuinalloysubstrates AT brianderby atmosphericpressurecatalyticvapordepositionofgrapheneonliquidinandcuinalloysubstrates
_version_	1718412716845039616

Atmospheric Pressure Catalytic Vapor Deposition of Graphene on Liquid In and Cu-In Alloy Substrates

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