Novel synthesis of ZnO thin films by facile solution process

A facile solution process to synthesis ZnO thin films was successfully conducted in this work. Zinc acetate dihydrates were used as the main precursor, dissolved in the mixture of acetylacetone and ethanol whichact as solvent and precursor simultaneously. This mixture deposited by spin coating and d...

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Autores principales:	Badrul Munir, Ersan Y. Muslih
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	ZnO Thin films Spin coating H2O vapor CO2 gas Acetylacetone Engineering (General). Civil engineering (General) TA1-2040
Acceso en línea:	https://doaj.org/article/6b7ce73f2f31441685ed0c4987230cec
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spelling	oai:doaj.org-article:6b7ce73f2f31441685ed0c4987230cec2021-11-22T04:18:12ZNovel synthesis of ZnO thin films by facile solution process1018-363910.1016/j.jksues.2020.06.003https://doaj.org/article/6b7ce73f2f31441685ed0c4987230cec2021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S101836392030252Xhttps://doaj.org/toc/1018-3639A facile solution process to synthesis ZnO thin films was successfully conducted in this work. Zinc acetate dihydrates were used as the main precursor, dissolved in the mixture of acetylacetone and ethanol whichact as solvent and precursor simultaneously. This mixture deposited by spin coating and dried under ambient atmosphere at room temperature. The reaction mechanism, structure, morphology, chemical composition and optoelectrical properties of the resulted ZnO thin film were studied. The as deposited films were annealed at 500 °C for 2 h under O2 gas flow added with H2O vapor and CO2 gas. The ZnO thin films showed a dense, homogenous morphology and high transparency. The film is an n-type semiconductor with 3.18 eV bandgap, has 1.25 × 10−19 cm3 carrier concentration, 12 cm2/Vs electron mobility and 2.42 × 10−3 Ω·cm resistivity making it suitable for application as window layer in a photovoltaic cell.Badrul MunirErsan Y. MuslihElsevierarticleZnOThin filmsSpin coatingH2O vaporCO2 gasAcetylacetoneEngineering (General). Civil engineering (General)TA1-2040ENJournal of King Saud University: Engineering Sciences, Vol 33, Iss 8, Pp 525-530 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	ZnO Thin films Spin coating H2O vapor CO2 gas Acetylacetone Engineering (General). Civil engineering (General) TA1-2040
spellingShingle	ZnO Thin films Spin coating H2O vapor CO2 gas Acetylacetone Engineering (General). Civil engineering (General) TA1-2040 Badrul Munir Ersan Y. Muslih Novel synthesis of ZnO thin films by facile solution process
description	A facile solution process to synthesis ZnO thin films was successfully conducted in this work. Zinc acetate dihydrates were used as the main precursor, dissolved in the mixture of acetylacetone and ethanol whichact as solvent and precursor simultaneously. This mixture deposited by spin coating and dried under ambient atmosphere at room temperature. The reaction mechanism, structure, morphology, chemical composition and optoelectrical properties of the resulted ZnO thin film were studied. The as deposited films were annealed at 500 °C for 2 h under O2 gas flow added with H2O vapor and CO2 gas. The ZnO thin films showed a dense, homogenous morphology and high transparency. The film is an n-type semiconductor with 3.18 eV bandgap, has 1.25 × 10−19 cm3 carrier concentration, 12 cm2/Vs electron mobility and 2.42 × 10−3 Ω·cm resistivity making it suitable for application as window layer in a photovoltaic cell.
format	article
author	Badrul Munir Ersan Y. Muslih
author_facet	Badrul Munir Ersan Y. Muslih
author_sort	Badrul Munir
title	Novel synthesis of ZnO thin films by facile solution process
title_short	Novel synthesis of ZnO thin films by facile solution process
title_full	Novel synthesis of ZnO thin films by facile solution process
title_fullStr	Novel synthesis of ZnO thin films by facile solution process
title_full_unstemmed	Novel synthesis of ZnO thin films by facile solution process
title_sort	novel synthesis of zno thin films by facile solution process
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/6b7ce73f2f31441685ed0c4987230cec
work_keys_str_mv	AT badrulmunir novelsynthesisofznothinfilmsbyfacilesolutionprocess AT ersanymuslih novelsynthesisofznothinfilmsbyfacilesolutionprocess
_version_	1718418227962314752

Novel synthesis of ZnO thin films by facile solution process

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