Structural transformation and phase change properties of Se substituted GeTe

Abstract GeTe1−xSex (0 ≤ x ≤ 1.0) alloys have been prepared both in bulk and thin film forms to study the effect of selenium (Se) substitution for tellurium (Te) on the phase change properties. It is observed that with increasing Se substitution in GeTe, the structure transforms from rhombohdral str...

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Autores principales:	Roopali Shekhawat, Haritha Pamuluri, Vinod Erkkara Madhavan, K. Ramesh
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/6bb23bea40c746fba9d83a5942256cef
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spelling	oai:doaj.org-article:6bb23bea40c746fba9d83a5942256cef2021-12-02T14:37:29ZStructural transformation and phase change properties of Se substituted GeTe10.1038/s41598-021-87206-x2045-2322https://doaj.org/article/6bb23bea40c746fba9d83a5942256cef2021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87206-xhttps://doaj.org/toc/2045-2322Abstract GeTe1−xSex (0 ≤ x ≤ 1.0) alloys have been prepared both in bulk and thin film forms to study the effect of selenium (Se) substitution for tellurium (Te) on the phase change properties. It is observed that with increasing Se substitution in GeTe, the structure transforms from rhombohdral structure to orthorhombic structure. Rietveld Refinement analysis support the phase transformation and show that the short and long bond lengths in crystalline GeTe decrease with increasing Se substitution but the rate of reduction of shorter bond length is more than the longer bond length. The GeTe1−xSex thin films undergo amorphous to crystalline phase change when annealed at high temperatures. The transition temperature shows an increasing trend with the Se substitution. The contrast in electrical resistivity between the amorphous and crystalline states is 104 for GeTe, and with the Se substitution, the contrast increases considerably to 106 for GeTe0.5Se0.5. Devices fabricated with thin films show that the threshold current decreases with the Se substitution indicating a reduction in the power required for WRITE operation. The present study shows that the crystalline structure, resistance, bandgap, transition temperature and threshold voltage of GeTe can be effectively controlled and tuned by the substitution of Te by Se, which is conducive for phase change memory applications.Roopali ShekhawatHaritha PamuluriVinod Erkkara MadhavanK. RameshNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Roopali Shekhawat Haritha Pamuluri Vinod Erkkara Madhavan K. Ramesh Structural transformation and phase change properties of Se substituted GeTe
description	Abstract GeTe1−xSex (0 ≤ x ≤ 1.0) alloys have been prepared both in bulk and thin film forms to study the effect of selenium (Se) substitution for tellurium (Te) on the phase change properties. It is observed that with increasing Se substitution in GeTe, the structure transforms from rhombohdral structure to orthorhombic structure. Rietveld Refinement analysis support the phase transformation and show that the short and long bond lengths in crystalline GeTe decrease with increasing Se substitution but the rate of reduction of shorter bond length is more than the longer bond length. The GeTe1−xSex thin films undergo amorphous to crystalline phase change when annealed at high temperatures. The transition temperature shows an increasing trend with the Se substitution. The contrast in electrical resistivity between the amorphous and crystalline states is 104 for GeTe, and with the Se substitution, the contrast increases considerably to 106 for GeTe0.5Se0.5. Devices fabricated with thin films show that the threshold current decreases with the Se substitution indicating a reduction in the power required for WRITE operation. The present study shows that the crystalline structure, resistance, bandgap, transition temperature and threshold voltage of GeTe can be effectively controlled and tuned by the substitution of Te by Se, which is conducive for phase change memory applications.
format	article
author	Roopali Shekhawat Haritha Pamuluri Vinod Erkkara Madhavan K. Ramesh
author_facet	Roopali Shekhawat Haritha Pamuluri Vinod Erkkara Madhavan K. Ramesh
author_sort	Roopali Shekhawat
title	Structural transformation and phase change properties of Se substituted GeTe
title_short	Structural transformation and phase change properties of Se substituted GeTe
title_full	Structural transformation and phase change properties of Se substituted GeTe
title_fullStr	Structural transformation and phase change properties of Se substituted GeTe
title_full_unstemmed	Structural transformation and phase change properties of Se substituted GeTe
title_sort	structural transformation and phase change properties of se substituted gete
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/6bb23bea40c746fba9d83a5942256cef
work_keys_str_mv	AT roopalishekhawat structuraltransformationandphasechangepropertiesofsesubstitutedgete AT harithapamuluri structuraltransformationandphasechangepropertiesofsesubstitutedgete AT vinoderkkaramadhavan structuraltransformationandphasechangepropertiesofsesubstitutedgete AT kramesh structuraltransformationandphasechangepropertiesofsesubstitutedgete
_version_	1718391011200204800

Structural transformation and phase change properties of Se substituted GeTe

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