Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions
Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF<sub>4</sub>, H<sub>2</sub> and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical depositio...
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2021
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oai:doaj.org-article:6bd1ccdf9122499d8bf699a71bfed2232021-11-25T18:14:57ZComparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions10.3390/ma142269471996-1944https://doaj.org/article/6bd1ccdf9122499d8bf699a71bfed2232021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6947https://doaj.org/toc/1996-1944Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF<sub>4</sub>, H<sub>2</sub> and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if the conditions for producing µc-Si with the largest crystalline fraction (X<sub>C</sub>), will also result in epi-Si films that encompass the best quality and largest crystalline silicon (c-Si) fraction. Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner. Therefore, we have distinguished that the H<sub>2</sub>/SiF<sub>4</sub> ratio affects the X<sub>C</sub> of µc-Si, the c-Si fraction in epi-Si films, and the structure of the epi-Si/c-Si interface. Raman and UV-Vis ellipsometry were used to evaluate the crystalline volume fraction (Xc) and composition of the deposited layers, while the structure of the films were inspected by high resolution transmission electron microscopy (HRTEM). Notably, the conditions for producing µc-Si with the largest X<sub>C</sub> are different in comparison to the fabrication conditions of epi-Si films with the best quality and largest c-Si fraction.Mario MorenoArturo PonceArturo GalindoEduardo OrtegaAlfredo MoralesJavier FloresRoberto AmbrosioAlfonso TorresLuis HernandezHector Vazquez-LealGilles PatriarchePere Roca i CabarrocasMDPI AGarticlemicrocrystalline siliconepitaxial growthplasma enhanced chemical vapor depositionelectron microscopyTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6947, p 6947 (2021) |
| institution |
DOAJ |
| collection |
DOAJ |
| language |
EN |
| topic |
microcrystalline silicon epitaxial growth plasma enhanced chemical vapor deposition electron microscopy Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
| spellingShingle |
microcrystalline silicon epitaxial growth plasma enhanced chemical vapor deposition electron microscopy Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Mario Moreno Arturo Ponce Arturo Galindo Eduardo Ortega Alfredo Morales Javier Flores Roberto Ambrosio Alfonso Torres Luis Hernandez Hector Vazquez-Leal Gilles Patriarche Pere Roca i Cabarrocas Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions |
| description |
Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF<sub>4</sub>, H<sub>2</sub> and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if the conditions for producing µc-Si with the largest crystalline fraction (X<sub>C</sub>), will also result in epi-Si films that encompass the best quality and largest crystalline silicon (c-Si) fraction. Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner. Therefore, we have distinguished that the H<sub>2</sub>/SiF<sub>4</sub> ratio affects the X<sub>C</sub> of µc-Si, the c-Si fraction in epi-Si films, and the structure of the epi-Si/c-Si interface. Raman and UV-Vis ellipsometry were used to evaluate the crystalline volume fraction (Xc) and composition of the deposited layers, while the structure of the films were inspected by high resolution transmission electron microscopy (HRTEM). Notably, the conditions for producing µc-Si with the largest X<sub>C</sub> are different in comparison to the fabrication conditions of epi-Si films with the best quality and largest c-Si fraction. |
| format |
article |
| author |
Mario Moreno Arturo Ponce Arturo Galindo Eduardo Ortega Alfredo Morales Javier Flores Roberto Ambrosio Alfonso Torres Luis Hernandez Hector Vazquez-Leal Gilles Patriarche Pere Roca i Cabarrocas |
| author_facet |
Mario Moreno Arturo Ponce Arturo Galindo Eduardo Ortega Alfredo Morales Javier Flores Roberto Ambrosio Alfonso Torres Luis Hernandez Hector Vazquez-Leal Gilles Patriarche Pere Roca i Cabarrocas |
| author_sort |
Mario Moreno |
| title |
Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions |
| title_short |
Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions |
| title_full |
Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions |
| title_fullStr |
Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions |
| title_full_unstemmed |
Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions |
| title_sort |
comparative study on the quality of microcrystalline and epitaxial silicon films produced by pecvd using identical sif<sub>4</sub> based process conditions |
| publisher |
MDPI AG |
| publishDate |
2021 |
| url |
https://doaj.org/article/6bd1ccdf9122499d8bf699a71bfed223 |
| work_keys_str_mv |
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