Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new cha...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6c4ac3716d00485e9e18c8452485754b |
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| Sumario: | In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new charge balance method provided by HEMTs and micro-FPs, the physical mechanism of FP adjusting the HEMT potential distribution and channel electric field distribution is analyzed. The new FP structure consists of a drain field plate (D-FP), a source field plate (S-FP) and several micro-gate field plates (G-FP) to improve the output characteristics of HEMTs. By adjusting the distribution of potential and channel electric field, a wider and more uniform channel electric field can be obtained, and the breakdown voltage can be increased to 1278 V. Although the on-resistance of the HEMT is slightly increased to 5.24 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mo>Ω</mo></semantics></math></inline-formula> mm, it is still lower than other reference values. These results may open up a new and effective method for manufacturing high-power devices for power electronics applications. |
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