Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new cha...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Xiaoyu Xia, Zhiyou Guo, Huiqing Sun
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	field plate GaN HEMT breakdown voltage normally-off Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/6c4ac3716d00485e9e18c8452485754b
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:6c4ac3716d00485e9e18c8452485754b
record_format	dspace
spelling	oai:doaj.org-article:6c4ac3716d00485e9e18c8452485754b2021-11-25T18:23:05ZStudy of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage10.3390/mi121113182072-666Xhttps://doaj.org/article/6c4ac3716d00485e9e18c8452485754b2021-10-01T00:00:00Zhttps://www.mdpi.com/2072-666X/12/11/1318https://doaj.org/toc/2072-666XIn this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new charge balance method provided by HEMTs and micro-FPs, the physical mechanism of FP adjusting the HEMT potential distribution and channel electric field distribution is analyzed. The new FP structure consists of a drain field plate (D-FP), a source field plate (S-FP) and several micro-gate field plates (G-FP) to improve the output characteristics of HEMTs. By adjusting the distribution of potential and channel electric field, a wider and more uniform channel electric field can be obtained, and the breakdown voltage can be increased to 1278 V. Although the on-resistance of the HEMT is slightly increased to 5.24 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mo>Ω</mo></semantics></math></inline-formula> mm, it is still lower than other reference values. These results may open up a new and effective method for manufacturing high-power devices for power electronics applications.Xiaoyu XiaZhiyou GuoHuiqing SunMDPI AGarticlefield plateGaN HEMTbreakdown voltagenormally-offMechanical engineering and machineryTJ1-1570ENMicromachines, Vol 12, Iss 1318, p 1318 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	field plate GaN HEMT breakdown voltage normally-off Mechanical engineering and machinery TJ1-1570
spellingShingle	field plate GaN HEMT breakdown voltage normally-off Mechanical engineering and machinery TJ1-1570 Xiaoyu Xia Zhiyou Guo Huiqing Sun Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
description	In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new charge balance method provided by HEMTs and micro-FPs, the physical mechanism of FP adjusting the HEMT potential distribution and channel electric field distribution is analyzed. The new FP structure consists of a drain field plate (D-FP), a source field plate (S-FP) and several micro-gate field plates (G-FP) to improve the output characteristics of HEMTs. By adjusting the distribution of potential and channel electric field, a wider and more uniform channel electric field can be obtained, and the breakdown voltage can be increased to 1278 V. Although the on-resistance of the HEMT is slightly increased to 5.24 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mo>Ω</mo></semantics></math></inline-formula> mm, it is still lower than other reference values. These results may open up a new and effective method for manufacturing high-power devices for power electronics applications.
format	article
author	Xiaoyu Xia Zhiyou Guo Huiqing Sun
author_facet	Xiaoyu Xia Zhiyou Guo Huiqing Sun
author_sort	Xiaoyu Xia
title	Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
title_short	Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
title_full	Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
title_fullStr	Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
title_full_unstemmed	Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
title_sort	study of normally-off algan/gan hemt with microfield plate for improvement of breakdown voltage
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/6c4ac3716d00485e9e18c8452485754b
work_keys_str_mv	AT xiaoyuxia studyofnormallyoffalganganhemtwithmicrofieldplateforimprovementofbreakdownvoltage AT zhiyouguo studyofnormallyoffalganganhemtwithmicrofieldplateforimprovementofbreakdownvoltage AT huiqingsun studyofnormallyoffalganganhemtwithmicrofieldplateforimprovementofbreakdownvoltage
_version_	1718411263822790656

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Ejemplares similares