Native microdefects and as-grown dislocations in pure and doped InP crystals
The fine defect structure (native microdefects and as-grown dislocations) of pure and doped InP crystals are considered. Some kinds of point defects are detected. They are connected with the technology of crystal growth and impurity concentration. It is shown that the type and conce...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2011
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6cfa3ac716c145cbb06ee5646cd0f7e6 |
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| Sumario: | The fine defect structure (native microdefects and as-grown dislocations) of pure and doped
InP crystals are considered. Some kinds of point defects are detected. They are connected with
the technology of crystal growth and impurity concentration. It is shown that the type and
concentration of doping impurity essentially change the as-grown dislocation density and
influence the mobility of freshly generated dislocations. The mechanism of plastic deformation
under the action of a concentrated load is related to dislocation mobility in the InP crystals and
impurity type. |
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