Native microdefects and as-grown dislocations in pure and doped InP crystals
The fine defect structure (native microdefects and as-grown dislocations) of pure and doped InP crystals are considered. Some kinds of point defects are detected. They are connected with the technology of crystal growth and impurity concentration. It is shown that the type and conce...
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2011
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oai:doaj.org-article:6cfa3ac716c145cbb06ee5646cd0f7e62021-11-21T12:02:22ZNative microdefects and as-grown dislocations in pure and doped InP crystals2537-63651810-648Xhttps://doaj.org/article/6cfa3ac716c145cbb06ee5646cd0f7e62011-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4334https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The fine defect structure (native microdefects and as-grown dislocations) of pure and doped InP crystals are considered. Some kinds of point defects are detected. They are connected with the technology of crystal growth and impurity concentration. It is shown that the type and concentration of doping impurity essentially change the as-grown dislocation density and influence the mobility of freshly generated dislocations. The mechanism of plastic deformation under the action of a concentrated load is related to dislocation mobility in the InP crystals and impurity type. Grabco, DariaDîntu, MariaRusu, EmilD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 2, Pp 164-173 (2011) |
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DOAJ |
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EN |
topic |
Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Grabco, Daria Dîntu, Maria Rusu, Emil Native microdefects and as-grown dislocations in pure and doped InP crystals |
description |
The fine defect structure (native microdefects and as-grown dislocations) of pure and doped
InP crystals are considered. Some kinds of point defects are detected. They are connected with
the technology of crystal growth and impurity concentration. It is shown that the type and
concentration of doping impurity essentially change the as-grown dislocation density and
influence the mobility of freshly generated dislocations. The mechanism of plastic deformation
under the action of a concentrated load is related to dislocation mobility in the InP crystals and
impurity type. |
format |
article |
author |
Grabco, Daria Dîntu, Maria Rusu, Emil |
author_facet |
Grabco, Daria Dîntu, Maria Rusu, Emil |
author_sort |
Grabco, Daria |
title |
Native microdefects and as-grown dislocations in pure and doped InP crystals |
title_short |
Native microdefects and as-grown dislocations in pure and doped InP crystals |
title_full |
Native microdefects and as-grown dislocations in pure and doped InP crystals |
title_fullStr |
Native microdefects and as-grown dislocations in pure and doped InP crystals |
title_full_unstemmed |
Native microdefects and as-grown dislocations in pure and doped InP crystals |
title_sort |
native microdefects and as-grown dislocations in pure and doped inp crystals |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2011 |
url |
https://doaj.org/article/6cfa3ac716c145cbb06ee5646cd0f7e6 |
work_keys_str_mv |
AT grabcodaria nativemicrodefectsandasgrowndislocationsinpureanddopedinpcrystals AT dintumaria nativemicrodefectsandasgrowndislocationsinpureanddopedinpcrystals AT rusuemil nativemicrodefectsandasgrowndislocationsinpureanddopedinpcrystals |
_version_ |
1718419311530344448 |