Native microdefects and as-grown dislocations in pure and doped InP crystals

The fine defect structure (native microdefects and as-grown dislocations) of pure and doped InP crystals are considered. Some kinds of point defects are detected. They are connected with the technology of crystal growth and impurity concentration. It is shown that the type and conce...

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Autores principales: Grabco, Daria, Dîntu, Maria, Rusu, Emil
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2011
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Acceso en línea:https://doaj.org/article/6cfa3ac716c145cbb06ee5646cd0f7e6
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spelling oai:doaj.org-article:6cfa3ac716c145cbb06ee5646cd0f7e62021-11-21T12:02:22ZNative microdefects and as-grown dislocations in pure and doped InP crystals2537-63651810-648Xhttps://doaj.org/article/6cfa3ac716c145cbb06ee5646cd0f7e62011-06-01T00:00:00Zhttps://mjps.nanotech.md/archive/2011/article/4334https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The fine defect structure (native microdefects and as-grown dislocations) of pure and doped InP crystals are considered. Some kinds of point defects are detected. They are connected with the technology of crystal growth and impurity concentration. It is shown that the type and concentration of doping impurity essentially change the as-grown dislocation density and influence the mobility of freshly generated dislocations. The mechanism of plastic deformation under the action of a concentrated load is related to dislocation mobility in the InP crystals and impurity type. Grabco, DariaDîntu, MariaRusu, EmilD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 10, Iss 2, Pp 164-173 (2011)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Grabco, Daria
Dîntu, Maria
Rusu, Emil
Native microdefects and as-grown dislocations in pure and doped InP crystals
description The fine defect structure (native microdefects and as-grown dislocations) of pure and doped InP crystals are considered. Some kinds of point defects are detected. They are connected with the technology of crystal growth and impurity concentration. It is shown that the type and concentration of doping impurity essentially change the as-grown dislocation density and influence the mobility of freshly generated dislocations. The mechanism of plastic deformation under the action of a concentrated load is related to dislocation mobility in the InP crystals and impurity type.
format article
author Grabco, Daria
Dîntu, Maria
Rusu, Emil
author_facet Grabco, Daria
Dîntu, Maria
Rusu, Emil
author_sort Grabco, Daria
title Native microdefects and as-grown dislocations in pure and doped InP crystals
title_short Native microdefects and as-grown dislocations in pure and doped InP crystals
title_full Native microdefects and as-grown dislocations in pure and doped InP crystals
title_fullStr Native microdefects and as-grown dislocations in pure and doped InP crystals
title_full_unstemmed Native microdefects and as-grown dislocations in pure and doped InP crystals
title_sort native microdefects and as-grown dislocations in pure and doped inp crystals
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2011
url https://doaj.org/article/6cfa3ac716c145cbb06ee5646cd0f7e6
work_keys_str_mv AT grabcodaria nativemicrodefectsandasgrowndislocationsinpureanddopedinpcrystals
AT dintumaria nativemicrodefectsandasgrowndislocationsinpureanddopedinpcrystals
AT rusuemil nativemicrodefectsandasgrowndislocationsinpureanddopedinpcrystals
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