Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications

Mingzhi Dai,1 Zhendong Wu,1 Shaocheng Qi,1 Changhe Huo,1 Qiang Zhang,1 Xingye Zhang,1 Thomas J Webster,2 Hengbo Zhang1 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 2Department of Chemical Engineering, Nor...

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Autores principales:	Dai M, Wu Z, Qi S, Huo C, Zhang Q, Zhang X, Webster TJ, Zhang H
Formato:	article
Lenguaje:	EN
Publicado:	Dove Medical Press 2020
Materias:	artificial bio synapses ion dynamics ppi (paired-pulse pulse inhibition) memory loss. Medicine (General) R5-920
Acceso en línea:	https://doaj.org/article/6d22522349d84b7a8e49c78d06fc671b
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spelling	oai:doaj.org-article:6d22522349d84b7a8e49c78d06fc671b2021-12-02T09:42:22ZImplementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications1178-2013https://doaj.org/article/6d22522349d84b7a8e49c78d06fc671b2020-03-01T00:00:00Zhttps://www.dovepress.com/implementation-of-ppi-with-nano-amorphous-oxide-semiconductor-devices--peer-reviewed-article-IJNhttps://doaj.org/toc/1178-2013Mingzhi Dai,1 Zhendong Wu,1 Shaocheng Qi,1 Changhe Huo,1 Qiang Zhang,1 Xingye Zhang,1 Thomas J Webster,2 Hengbo Zhang1 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 2Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USACorrespondence: Mingzhi Dai Email daimz@nimte.ac.cnBackground: Electronic devices which mimic the functionality of biological synapses are a large step to replicate the human brain for neuromorphic computing and for numerous medical research investigations. One of the representative synaptic behaviors is paired-pulse facilitation (PPF). It has been widely investigated because it is regarded to be related to biological memory. However, plasticity behavior is only part of the human brain memory behavior.Methods: Here, we present a phenomenon which is opposite to PPF, i.e., paired-pulse inhibition (PPI), in nano oxide devices for the first time. The research here suggests that rather than being enhanced, the phenomena of memory loss would also be possessed by such electronic devices. The device physics mechanism behind memory loss behavior was investigated. This mechanism is sustained by historical memory and degradation manufactured by device trauma to regulate characteristically stimulated origins of artificial transmission behaviors.Results: Under the trauma of a memory device, both the signal amplitude and signal time stimulated by a pulse are lower than the first signal stimulated by a previous pulse in the PPF, representing a new scenario in the struggle for memory. In this way, more typical human brain behaviors could be simulated, including the effect of age on latency and error generation, cerebellar infarct, trauma and memory loss pharmacological actions (such as those caused by hyoscines and nitrazepam).Conclusion: Thus, this study developed a new approach for implementing the manner in which the brain works in semiconductor devices for improving medical research.Keywords: artificial bio synapses, ion dynamics, PPI, paired-pulse pulse inhibition, memory lossDai MWu ZQi SHuo CZhang QZhang XWebster TJZhang HDove Medical Pressarticleartificial bio synapsesion dynamicsppi (paired-pulse pulse inhibition)memory loss.Medicine (General)R5-920ENInternational Journal of Nanomedicine, Vol Volume 15, Pp 1863-1870 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	artificial bio synapses ion dynamics ppi (paired-pulse pulse inhibition) memory loss. Medicine (General) R5-920
spellingShingle	artificial bio synapses ion dynamics ppi (paired-pulse pulse inhibition) memory loss. Medicine (General) R5-920 Dai M Wu Z Qi S Huo C Zhang Q Zhang X Webster TJ Zhang H Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications
description	Mingzhi Dai,1 Zhendong Wu,1 Shaocheng Qi,1 Changhe Huo,1 Qiang Zhang,1 Xingye Zhang,1 Thomas J Webster,2 Hengbo Zhang1 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 2Department of Chemical Engineering, Northeastern University, Boston, MA 02115, USACorrespondence: Mingzhi Dai Email daimz@nimte.ac.cnBackground: Electronic devices which mimic the functionality of biological synapses are a large step to replicate the human brain for neuromorphic computing and for numerous medical research investigations. One of the representative synaptic behaviors is paired-pulse facilitation (PPF). It has been widely investigated because it is regarded to be related to biological memory. However, plasticity behavior is only part of the human brain memory behavior.Methods: Here, we present a phenomenon which is opposite to PPF, i.e., paired-pulse inhibition (PPI), in nano oxide devices for the first time. The research here suggests that rather than being enhanced, the phenomena of memory loss would also be possessed by such electronic devices. The device physics mechanism behind memory loss behavior was investigated. This mechanism is sustained by historical memory and degradation manufactured by device trauma to regulate characteristically stimulated origins of artificial transmission behaviors.Results: Under the trauma of a memory device, both the signal amplitude and signal time stimulated by a pulse are lower than the first signal stimulated by a previous pulse in the PPF, representing a new scenario in the struggle for memory. In this way, more typical human brain behaviors could be simulated, including the effect of age on latency and error generation, cerebellar infarct, trauma and memory loss pharmacological actions (such as those caused by hyoscines and nitrazepam).Conclusion: Thus, this study developed a new approach for implementing the manner in which the brain works in semiconductor devices for improving medical research.Keywords: artificial bio synapses, ion dynamics, PPI, paired-pulse pulse inhibition, memory loss
format	article
author	Dai M Wu Z Qi S Huo C Zhang Q Zhang X Webster TJ Zhang H
author_facet	Dai M Wu Z Qi S Huo C Zhang Q Zhang X Webster TJ Zhang H
author_sort	Dai M
title	Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications
title_short	Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications
title_full	Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications
title_fullStr	Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications
title_full_unstemmed	Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications
title_sort	implementation of ppi with nano amorphous oxide semiconductor devices for medical applications
publisher	Dove Medical Press
publishDate	2020
url	https://doaj.org/article/6d22522349d84b7a8e49c78d06fc671b
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Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications

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