Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

For solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit.

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Detalles Bibliográficos
Autores principales:	S. D. Liles, R. Li, C. H. Yang, F. E. Hudson, M. Veldhorst, A. S. Dzurak, A. R. Hamilton
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/6d356d1822bc4063880325dacf88a1bd
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spelling	oai:doaj.org-article:6d356d1822bc4063880325dacf88a1bd2021-12-02T16:49:33ZSpin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot10.1038/s41467-018-05700-92041-1723https://doaj.org/article/6d356d1822bc4063880325dacf88a1bd2018-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-05700-9https://doaj.org/toc/2041-1723For solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit.S. D. LilesR. LiC. H. YangF. E. HudsonM. VeldhorstA. S. DzurakA. R. HamiltonNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q S. D. Liles R. Li C. H. Yang F. E. Hudson M. Veldhorst A. S. Dzurak A. R. Hamilton Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
description	For solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit.
format	article
author	S. D. Liles R. Li C. H. Yang F. E. Hudson M. Veldhorst A. S. Dzurak A. R. Hamilton
author_facet	S. D. Liles R. Li C. H. Yang F. E. Hudson M. Veldhorst A. S. Dzurak A. R. Hamilton
author_sort	S. D. Liles
title	Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
title_short	Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
title_full	Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
title_fullStr	Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
title_full_unstemmed	Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
title_sort	spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/6d356d1822bc4063880325dacf88a1bd
work_keys_str_mv	AT sdliles spinandorbitalstructureofthefirstsixholesinasiliconmetaloxidesemiconductorquantumdot AT rli spinandorbitalstructureofthefirstsixholesinasiliconmetaloxidesemiconductorquantumdot AT chyang spinandorbitalstructureofthefirstsixholesinasiliconmetaloxidesemiconductorquantumdot AT fehudson spinandorbitalstructureofthefirstsixholesinasiliconmetaloxidesemiconductorquantumdot AT mveldhorst spinandorbitalstructureofthefirstsixholesinasiliconmetaloxidesemiconductorquantumdot AT asdzurak spinandorbitalstructureofthefirstsixholesinasiliconmetaloxidesemiconductorquantumdot AT arhamilton spinandorbitalstructureofthefirstsixholesinasiliconmetaloxidesemiconductorquantumdot
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Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

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