Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
For solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit.
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2018
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6d356d1822bc4063880325dacf88a1bd |
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