Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study

Abstract A variety of theoretical and experimental works have reported several potential applications of MoS2 monolayer based heterostructures (HSs) such as light emitting diodes, photodetectors and field effect transistors etc. In the present work, we have theoretically performed as a model case st...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Amreen Bano, N. K. Gaur
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
R
Q
Acceso en línea:https://doaj.org/article/6d376c57c38248c88f66f6617a100090
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:6d376c57c38248c88f66f6617a100090
record_format dspace
spelling oai:doaj.org-article:6d376c57c38248c88f66f6617a1000902021-12-02T15:07:49ZInterfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study10.1038/s41598-017-18984-62045-2322https://doaj.org/article/6d376c57c38248c88f66f6617a1000902018-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-18984-6https://doaj.org/toc/2045-2322Abstract A variety of theoretical and experimental works have reported several potential applications of MoS2 monolayer based heterostructures (HSs) such as light emitting diodes, photodetectors and field effect transistors etc. In the present work, we have theoretically performed as a model case study, MoS2 monolayer deposited over insulating SrTiO3 (001) to study the band alignment at TiO2 termination. The interfacial characteristics are found to be highly dependent on the interface termination. With an insulating oxide material, a significant band gap (0.85eV) is found in MoS2/TiO2 interface heterostructure (HS). A unique electronic band profile with an indirect band gap (0.67eV) is observed in MoS2 monolayer when confined in a cubic environment of SrTiO3 (STO). Adsorption analysis showed the chemisorption of MoS2 on the surface of STO substrate with TiO2 termination which is justified by the charge density calculations that shows the existence of covalent bonding at the interface. The fabrication of HS of such materials paves the path for developing the unprecedented 2D materials with exciting properties such as semiconducting devices, thermoelectric and optoelectronic applications.Amreen BanoN. K. GaurNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Amreen Bano
N. K. Gaur
Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study
description Abstract A variety of theoretical and experimental works have reported several potential applications of MoS2 monolayer based heterostructures (HSs) such as light emitting diodes, photodetectors and field effect transistors etc. In the present work, we have theoretically performed as a model case study, MoS2 monolayer deposited over insulating SrTiO3 (001) to study the band alignment at TiO2 termination. The interfacial characteristics are found to be highly dependent on the interface termination. With an insulating oxide material, a significant band gap (0.85eV) is found in MoS2/TiO2 interface heterostructure (HS). A unique electronic band profile with an indirect band gap (0.67eV) is observed in MoS2 monolayer when confined in a cubic environment of SrTiO3 (STO). Adsorption analysis showed the chemisorption of MoS2 on the surface of STO substrate with TiO2 termination which is justified by the charge density calculations that shows the existence of covalent bonding at the interface. The fabrication of HS of such materials paves the path for developing the unprecedented 2D materials with exciting properties such as semiconducting devices, thermoelectric and optoelectronic applications.
format article
author Amreen Bano
N. K. Gaur
author_facet Amreen Bano
N. K. Gaur
author_sort Amreen Bano
title Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study
title_short Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study
title_full Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study
title_fullStr Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study
title_full_unstemmed Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study
title_sort interfacial coupling effect on electron transport in mos2/srtio3 heterostructure: an ab-initio study
publisher Nature Portfolio
publishDate 2018
url https://doaj.org/article/6d376c57c38248c88f66f6617a100090
work_keys_str_mv AT amreenbano interfacialcouplingeffectonelectrontransportinmos2srtio3heterostructureanabinitiostudy
AT nkgaur interfacialcouplingeffectonelectrontransportinmos2srtio3heterostructureanabinitiostudy
_version_ 1718388392749694976