Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire

Abstract Non-polar (11–20) GaN with significantly improved crystal quality has been achieved by means of overgrowth on regularly arrayed micro-rod templates on sapphire in comparison with standard non-polar GaN grown without any patterning processes on sapphire. Our overgrown GaN shows massively red...

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Autores principales:	L. Jiu, Y. Gong, T. Wang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/6d95d86089fc42db8f74c11226783670
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spelling	oai:doaj.org-article:6d95d86089fc42db8f74c112267836702021-12-02T15:08:40ZOvergrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire10.1038/s41598-018-28328-72045-2322https://doaj.org/article/6d95d86089fc42db8f74c112267836702018-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-28328-7https://doaj.org/toc/2045-2322Abstract Non-polar (11–20) GaN with significantly improved crystal quality has been achieved by means of overgrowth on regularly arrayed micro-rod templates on sapphire in comparison with standard non-polar GaN grown without any patterning processes on sapphire. Our overgrown GaN shows massively reduced linewidth of X-ray rocking curves with typical values of 270 arcsec along the [0001] direction and 380 arcsec along the [1–100] direction, which are among the best reports. Detailed X-ray measurements have been performed in order to investigate strain relaxation and in-plane strain distribution. The study has been compared with the standard non-polar GaN grown without any patterning processes and an extra non-polar GaN sample overgrown on a standard stripe-patterned template. The standard non-polar GaN grown without involving any patterning processes typically exhibits highly anisotropic in-plane strain distribution, while the overgrown GaN on our regularly arrayed micro-rod templates shows a highly isotropic in-plane strain distribution. Between them is the overgrown non-polar GaN on the stripe-patterned template. The results presented demonstrate the major advantages of using our regularly arrayed micro-rod templates for the overgrowth of non-polar GaN, leading to both high crystal quality and isotropic in-plane strain distribution, which is important for the further growth of any device structures.L. JiuY. GongT. WangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q L. Jiu Y. Gong T. Wang Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
description	Abstract Non-polar (11–20) GaN with significantly improved crystal quality has been achieved by means of overgrowth on regularly arrayed micro-rod templates on sapphire in comparison with standard non-polar GaN grown without any patterning processes on sapphire. Our overgrown GaN shows massively reduced linewidth of X-ray rocking curves with typical values of 270 arcsec along the [0001] direction and 380 arcsec along the [1–100] direction, which are among the best reports. Detailed X-ray measurements have been performed in order to investigate strain relaxation and in-plane strain distribution. The study has been compared with the standard non-polar GaN grown without any patterning processes and an extra non-polar GaN sample overgrown on a standard stripe-patterned template. The standard non-polar GaN grown without involving any patterning processes typically exhibits highly anisotropic in-plane strain distribution, while the overgrown GaN on our regularly arrayed micro-rod templates shows a highly isotropic in-plane strain distribution. Between them is the overgrown non-polar GaN on the stripe-patterned template. The results presented demonstrate the major advantages of using our regularly arrayed micro-rod templates for the overgrowth of non-polar GaN, leading to both high crystal quality and isotropic in-plane strain distribution, which is important for the further growth of any device structures.
format	article
author	L. Jiu Y. Gong T. Wang
author_facet	L. Jiu Y. Gong T. Wang
author_sort	L. Jiu
title	Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
title_short	Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
title_full	Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
title_fullStr	Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
title_full_unstemmed	Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
title_sort	overgrowth and strain investigation of (11–20) non-polar gan on patterned templates on sapphire
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/6d95d86089fc42db8f74c11226783670
work_keys_str_mv	AT ljiu overgrowthandstraininvestigationof1120nonpolarganonpatternedtemplatesonsapphire AT ygong overgrowthandstraininvestigationof1120nonpolarganonpatternedtemplatesonsapphire AT twang overgrowthandstraininvestigationof1120nonpolarganonpatternedtemplatesonsapphire
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Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire

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