A mode-balanced reconfigurable logic gate built in a van der Waals strata

Abstract Two-dimensional (2D) semiconducting materials, in particular transition-metal dichalcogenides, have emerged as the preferred channel materials for sub-5 nm field-effect transistors (FETs). However, the lack of practical doping techniques for these materials poses a significant challenge to...

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Autores principales: Wei Cao, Jae Hwan Chu, Kamyar Parto, Kaustav Banerjee
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/6ddcd6ece133465e948e2379bdff4e8c
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spelling oai:doaj.org-article:6ddcd6ece133465e948e2379bdff4e8c2021-12-02T14:21:30ZA mode-balanced reconfigurable logic gate built in a van der Waals strata10.1038/s41699-020-00198-62397-7132https://doaj.org/article/6ddcd6ece133465e948e2379bdff4e8c2021-02-01T00:00:00Zhttps://doi.org/10.1038/s41699-020-00198-6https://doaj.org/toc/2397-7132Abstract Two-dimensional (2D) semiconducting materials, in particular transition-metal dichalcogenides, have emerged as the preferred channel materials for sub-5 nm field-effect transistors (FETs). However, the lack of practical doping techniques for these materials poses a significant challenge to designing complementary logic gates containing both n- and p-type FETs. Although electrical tuning of the polarity of 2D-FETs can potentially circumvent this problem, such devices suffer from the lack of balanced n- and p-mode transistor performance, forming one of the most enigmatic challenges of the reconfigurable 2D-FET technology. Here we provide a solution to this dilemma by judicious use of van der Waals (vdW) materials consisting of conductors, dielectrics and semiconductors forming a 50 nm thin quantum engineered strata that can guarantee a purely vdW-type interlayer interaction, which faithfully preserves the mid-gap contact design and thereby achieves an intrinsically mode-balanced and fully reconfigurable all-2D logic gate. The intrinsically mode-balanced gate eliminates the need for transistor sizing and allows post-fabrication reconfigurability to the transistor operation mode, simultaneously allowing an ultra-compact footprint and increased circuit functionality, which can be potentially exploited to build more area-efficient and low-cost integrated electronics for the internet of things (IoT) paradigm.Wei CaoJae Hwan ChuKamyar PartoKaustav BanerjeeNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Wei Cao
Jae Hwan Chu
Kamyar Parto
Kaustav Banerjee
A mode-balanced reconfigurable logic gate built in a van der Waals strata
description Abstract Two-dimensional (2D) semiconducting materials, in particular transition-metal dichalcogenides, have emerged as the preferred channel materials for sub-5 nm field-effect transistors (FETs). However, the lack of practical doping techniques for these materials poses a significant challenge to designing complementary logic gates containing both n- and p-type FETs. Although electrical tuning of the polarity of 2D-FETs can potentially circumvent this problem, such devices suffer from the lack of balanced n- and p-mode transistor performance, forming one of the most enigmatic challenges of the reconfigurable 2D-FET technology. Here we provide a solution to this dilemma by judicious use of van der Waals (vdW) materials consisting of conductors, dielectrics and semiconductors forming a 50 nm thin quantum engineered strata that can guarantee a purely vdW-type interlayer interaction, which faithfully preserves the mid-gap contact design and thereby achieves an intrinsically mode-balanced and fully reconfigurable all-2D logic gate. The intrinsically mode-balanced gate eliminates the need for transistor sizing and allows post-fabrication reconfigurability to the transistor operation mode, simultaneously allowing an ultra-compact footprint and increased circuit functionality, which can be potentially exploited to build more area-efficient and low-cost integrated electronics for the internet of things (IoT) paradigm.
format article
author Wei Cao
Jae Hwan Chu
Kamyar Parto
Kaustav Banerjee
author_facet Wei Cao
Jae Hwan Chu
Kamyar Parto
Kaustav Banerjee
author_sort Wei Cao
title A mode-balanced reconfigurable logic gate built in a van der Waals strata
title_short A mode-balanced reconfigurable logic gate built in a van der Waals strata
title_full A mode-balanced reconfigurable logic gate built in a van der Waals strata
title_fullStr A mode-balanced reconfigurable logic gate built in a van der Waals strata
title_full_unstemmed A mode-balanced reconfigurable logic gate built in a van der Waals strata
title_sort mode-balanced reconfigurable logic gate built in a van der waals strata
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/6ddcd6ece133465e948e2379bdff4e8c
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