Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

Abstract The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far s...

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Autores principales:	Arka B. Dey, Milan K. Sanyal, Ian Farrer, Karthick Perumal, David A. Ritchie, Qianqian Li, Jinsong Wu, Vinayak Dravid
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/6e36ad55e1db4e9ba66dc5cba0eb1c91
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spelling	oai:doaj.org-article:6e36ad55e1db4e9ba66dc5cba0eb1c912021-12-02T15:08:48ZCorrelating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots10.1038/s41598-018-25841-72045-2322https://doaj.org/article/6e36ad55e1db4e9ba66dc5cba0eb1c912018-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-25841-7https://doaj.org/toc/2045-2322Abstract The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far structural and PL properties have been probed from two different epitaxial layers, namely top-capped and buried layers respectively. Here, we report for the first time both structural and PL measurements from an uncapped layer of InGaAs QDs to correlate directly composition, strain and shape of QDs with the optical properties. Synchrotron X-ray scattering measurements show migration of In atom from the apex of QDs giving systematic reduction of height and enlargement of QDs base in the capping process. The optical transitions show systematic reduction in the energy of ground state and the first excited state transition lines with increase in capping but the energy of the second excited state line remain unchanged. We also found that the excitons are confined at the base region of these elliptically shaped QDs showing an interesting volume-dependent confinement energy scaling of 0.3 instead of 0.67 expected for spherical dots. The presented method will help us tuning the growth of QDs to achieve desired optical properties.Arka B. DeyMilan K. SanyalIan FarrerKarthick PerumalDavid A. RitchieQianqian LiJinsong WuVinayak DravidNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Arka B. Dey Milan K. Sanyal Ian Farrer Karthick Perumal David A. Ritchie Qianqian Li Jinsong Wu Vinayak Dravid Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
description	Abstract The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far structural and PL properties have been probed from two different epitaxial layers, namely top-capped and buried layers respectively. Here, we report for the first time both structural and PL measurements from an uncapped layer of InGaAs QDs to correlate directly composition, strain and shape of QDs with the optical properties. Synchrotron X-ray scattering measurements show migration of In atom from the apex of QDs giving systematic reduction of height and enlargement of QDs base in the capping process. The optical transitions show systematic reduction in the energy of ground state and the first excited state transition lines with increase in capping but the energy of the second excited state line remain unchanged. We also found that the excitons are confined at the base region of these elliptically shaped QDs showing an interesting volume-dependent confinement energy scaling of 0.3 instead of 0.67 expected for spherical dots. The presented method will help us tuning the growth of QDs to achieve desired optical properties.
format	article
author	Arka B. Dey Milan K. Sanyal Ian Farrer Karthick Perumal David A. Ritchie Qianqian Li Jinsong Wu Vinayak Dravid
author_facet	Arka B. Dey Milan K. Sanyal Ian Farrer Karthick Perumal David A. Ritchie Qianqian Li Jinsong Wu Vinayak Dravid
author_sort	Arka B. Dey
title	Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
title_short	Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
title_full	Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
title_fullStr	Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
title_full_unstemmed	Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
title_sort	correlating photoluminescence and structural properties of uncapped and gaas-capped epitaxial ingaas quantum dots
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/6e36ad55e1db4e9ba66dc5cba0eb1c91
work_keys_str_mv	AT arkabdey correlatingphotoluminescenceandstructuralpropertiesofuncappedandgaascappedepitaxialingaasquantumdots AT milanksanyal correlatingphotoluminescenceandstructuralpropertiesofuncappedandgaascappedepitaxialingaasquantumdots AT ianfarrer correlatingphotoluminescenceandstructuralpropertiesofuncappedandgaascappedepitaxialingaasquantumdots AT karthickperumal correlatingphotoluminescenceandstructuralpropertiesofuncappedandgaascappedepitaxialingaasquantumdots AT davidaritchie correlatingphotoluminescenceandstructuralpropertiesofuncappedandgaascappedepitaxialingaasquantumdots AT qianqianli correlatingphotoluminescenceandstructuralpropertiesofuncappedandgaascappedepitaxialingaasquantumdots AT jinsongwu correlatingphotoluminescenceandstructuralpropertiesofuncappedandgaascappedepitaxialingaasquantumdots AT vinayakdravid correlatingphotoluminescenceandstructuralpropertiesofuncappedandgaascappedepitaxialingaasquantumdots
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Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

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