Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots

Abstract The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far s...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Arka B. Dey, Milan K. Sanyal, Ian Farrer, Karthick Perumal, David A. Ritchie, Qianqian Li, Jinsong Wu, Vinayak Dravid
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Medicine
R
Science
Q
Acceso en línea:https://doaj.org/article/6e36ad55e1db4e9ba66dc5cba0eb1c91
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Ejemplares similares