Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
Abstract The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far s...
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| Auteurs principaux: | , , , , , , , |
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| Format: | article |
| Langue: | EN |
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Nature Portfolio
2018
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| Accès en ligne: | https://doaj.org/article/6e36ad55e1db4e9ba66dc5cba0eb1c91 |
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