Acoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces

We had theoretically studied the energy spectra and group velocities of the acoustic phonons in the rectangular GaN nanowire, covered with elastically dissimilar barriers. It was established that the number of quantum branches increases and spatial degeneracy by wave number q disappears in suc...

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Autores principales:	Nica, Denis, Zincenco, Nadejda
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/6ed7d304299f4f7a9401a4de35fb28c0
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spelling	oai:doaj.org-article:6ed7d304299f4f7a9401a4de35fb28c02021-11-21T12:10:36ZAcoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces 2537-63651810-648Xhttps://doaj.org/article/6ed7d304299f4f7a9401a4de35fb28c02006-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3426https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365We had theoretically studied the energy spectra and group velocities of the acoustic phonons in the rectangular GaN nanowire, covered with elastically dissimilar barriers. It was established that the number of quantum branches increases and spatial degeneracy by wave number q disappears in such wire. The elastic properties of acoustically mismatched barrier influence dramatically the phonon spectrum. The barriers with lower sound velocity (“acoustically slow” barriers) are “compressing” the phonon energy spectrum and strongly reducing the group velocities of the phonons. The barriers with higher sound velocity (“acoustically fast barriers”) demonstrated the opposite effect. The reason for such anomalous, at first look, but strong influence of barrier had been established. In particular, it consists in the re-distribution of the elastic deformations in the heterowire. In the case of “acoustically slow” barriers the wave of elastic deformations in a wide interval of the wave vector retracts into barriers (phonon depletion of the core wire) and spreads there with the velocities corresponding to the acoustic properties of the barrier layers. The opposite situation takes place in the case of “acoustically fast” barriers. It is concluded that these effects can be used in the phonon engineering. Nica, DenisZincenco, NadejdaD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 1, Pp 103-112 (2006)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Nica, Denis Zincenco, Nadejda Acoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces
description	We had theoretically studied the energy spectra and group velocities of the acoustic phonons in the rectangular GaN nanowire, covered with elastically dissimilar barriers. It was established that the number of quantum branches increases and spatial degeneracy by wave number q disappears in such wire. The elastic properties of acoustically mismatched barrier influence dramatically the phonon spectrum. The barriers with lower sound velocity (“acoustically slow” barriers) are “compressing” the phonon energy spectrum and strongly reducing the group velocities of the phonons. The barriers with higher sound velocity (“acoustically fast barriers”) demonstrated the opposite effect. The reason for such anomalous, at first look, but strong influence of barrier had been established. In particular, it consists in the re-distribution of the elastic deformations in the heterowire. In the case of “acoustically slow” barriers the wave of elastic deformations in a wide interval of the wave vector retracts into barriers (phonon depletion of the core wire) and spreads there with the velocities corresponding to the acoustic properties of the barrier layers. The opposite situation takes place in the case of “acoustically fast” barriers. It is concluded that these effects can be used in the phonon engineering.
format	article
author	Nica, Denis Zincenco, Nadejda
author_facet	Nica, Denis Zincenco, Nadejda
author_sort	Nica, Denis
title	Acoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces
title_short	Acoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces
title_full	Acoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces
title_fullStr	Acoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces
title_full_unstemmed	Acoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces
title_sort	acoustical properties of rectangular gan quantum wires covered by elastically dissimilar barriers with clamped outer surfaces
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2006
url	https://doaj.org/article/6ed7d304299f4f7a9401a4de35fb28c0
work_keys_str_mv	AT nicadenis acousticalpropertiesofrectangularganquantumwirescoveredbyelasticallydissimilarbarrierswithclampedoutersurfaces AT zincenconadejda acousticalpropertiesofrectangularganquantumwirescoveredbyelasticallydissimilarbarrierswithclampedoutersurfaces
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Acoustical properties of rectangular GaN quantum wires covered by elastically dissimilar barriers with clamped outer surfaces

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