Preparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition

Carbon nitride has noteworthy properties including high hardness levels. If the c-C3N4 or β-C3N4 structure can be synthesized, then hardness levels higher than that of diamond can be obtained. It is important to clarify the effect of ion impact on the growth of crystalline carbon nitrides on the syn...

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Autores principales:	Ippei TANAKA, Takumi NISHIMIYA, Gaku OHGITA, Yasunori HARADA
Formato:	article
Lenguaje:	EN
Publicado:	The Japan Society of Mechanical Engineers 2019
Materias:	carbon nitride film ibad electron beam deposition ion beam hardness Mechanical engineering and machinery TJ1-1570
Acceso en línea:	https://doaj.org/article/6f8fad484c9c4ebbb2cdd01b42e40b79
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spelling	oai:doaj.org-article:6f8fad484c9c4ebbb2cdd01b42e40b792021-11-29T05:43:34ZPreparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition2187-974510.1299/mej.18-00547https://doaj.org/article/6f8fad484c9c4ebbb2cdd01b42e40b792019-02-01T00:00:00Zhttps://www.jstage.jst.go.jp/article/mej/6/3/6_18-00547/_pdf/-char/enhttps://doaj.org/toc/2187-9745Carbon nitride has noteworthy properties including high hardness levels. If the c-C3N4 or β-C3N4 structure can be synthesized, then hardness levels higher than that of diamond can be obtained. It is important to clarify the effect of ion impact on the growth of crystalline carbon nitrides on the synthesis of super-hard carbon nitrides. The ion beam-assisted deposition (IBAD) technique provides independent control over parameters, such as ion energy, temperature, and arrival rate of the atomic species during deposition. In this study, we investigated the structure and composition of a carbon nitride film prepared using graphitic carbon nitride as the evaporation source for the IBAD. The graphitic carbon nitride was formed into a pellet by press molding. The film deposited without nitrogen ion beam was obtained by evaporation using the pellet molded at 200 °C and 300 °C as the evaporation source. An amorphous carbon nitride film was obtained by IBAD using g-C3N4 as the evaporation source. The main chemical bonding in the carbon nitride film changed from C-N=C to C-C by varying the acceleration voltage of the nitrogen ion beam. Accordingly, the hardness of the film was increased. The hardness of the film at an acceleration voltage of 500 V was 23 GPa. This is due to the breaking of the CN bond by the ion beam, depending on the acceleration voltage of the ion beam.Ippei TANAKATakumi NISHIMIYAGaku OHGITAYasunori HARADAThe Japan Society of Mechanical Engineersarticlecarbon nitride filmibadelectron beam depositionion beamhardnessMechanical engineering and machineryTJ1-1570ENMechanical Engineering Journal, Vol 6, Iss 3, Pp 18-00547-18-00547 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	carbon nitride film ibad electron beam deposition ion beam hardness Mechanical engineering and machinery TJ1-1570
spellingShingle	carbon nitride film ibad electron beam deposition ion beam hardness Mechanical engineering and machinery TJ1-1570 Ippei TANAKA Takumi NISHIMIYA Gaku OHGITA Yasunori HARADA Preparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition
description	Carbon nitride has noteworthy properties including high hardness levels. If the c-C3N4 or β-C3N4 structure can be synthesized, then hardness levels higher than that of diamond can be obtained. It is important to clarify the effect of ion impact on the growth of crystalline carbon nitrides on the synthesis of super-hard carbon nitrides. The ion beam-assisted deposition (IBAD) technique provides independent control over parameters, such as ion energy, temperature, and arrival rate of the atomic species during deposition. In this study, we investigated the structure and composition of a carbon nitride film prepared using graphitic carbon nitride as the evaporation source for the IBAD. The graphitic carbon nitride was formed into a pellet by press molding. The film deposited without nitrogen ion beam was obtained by evaporation using the pellet molded at 200 °C and 300 °C as the evaporation source. An amorphous carbon nitride film was obtained by IBAD using g-C3N4 as the evaporation source. The main chemical bonding in the carbon nitride film changed from C-N=C to C-C by varying the acceleration voltage of the nitrogen ion beam. Accordingly, the hardness of the film was increased. The hardness of the film at an acceleration voltage of 500 V was 23 GPa. This is due to the breaking of the CN bond by the ion beam, depending on the acceleration voltage of the ion beam.
format	article
author	Ippei TANAKA Takumi NISHIMIYA Gaku OHGITA Yasunori HARADA
author_facet	Ippei TANAKA Takumi NISHIMIYA Gaku OHGITA Yasunori HARADA
author_sort	Ippei TANAKA
title	Preparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition
title_short	Preparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition
title_full	Preparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition
title_fullStr	Preparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition
title_full_unstemmed	Preparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition
title_sort	preparation of carbon nitride films from g-c3n4 by ion-beam-assisted deposition
publisher	The Japan Society of Mechanical Engineers
publishDate	2019
url	https://doaj.org/article/6f8fad484c9c4ebbb2cdd01b42e40b79
work_keys_str_mv	AT ippeitanaka preparationofcarbonnitridefilmsfromgc3n4byionbeamassisteddeposition AT takuminishimiya preparationofcarbonnitridefilmsfromgc3n4byionbeamassisteddeposition AT gakuohgita preparationofcarbonnitridefilmsfromgc3n4byionbeamassisteddeposition AT yasunoriharada preparationofcarbonnitridefilmsfromgc3n4byionbeamassisteddeposition
_version_	1718407650956279808

Preparation of carbon nitride films from g-C3N4 by ion-beam-assisted deposition

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