Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

Abstract We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tende...

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Autores principales:	Seungyang Heo, Chadol Oh, Junwoo Son, Hyun Myung Jang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/7054610b50d846d5842cf680e20b0278
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spelling	oai:doaj.org-article:7054610b50d846d5842cf680e20b02782021-12-02T16:06:20ZInfluence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films10.1038/s41598-017-04884-22045-2322https://doaj.org/article/7054610b50d846d5842cf680e20b02782017-07-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04884-2https://doaj.org/toc/2045-2322Abstract We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tended to increase oxygen deficiency (δ) in NdNiO3−δ thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature (T MI), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect sensitively influences both structural and electronic properties, and provides useful knobs for tailoring correlation-induced properties in complex oxides.Seungyang HeoChadol OhJunwoo SonHyun Myung JangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Seungyang Heo Chadol Oh Junwoo Son Hyun Myung Jang Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
description	Abstract We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tended to increase oxygen deficiency (δ) in NdNiO3−δ thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature (T MI), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect sensitively influences both structural and electronic properties, and provides useful knobs for tailoring correlation-induced properties in complex oxides.
format	article
author	Seungyang Heo Chadol Oh Junwoo Son Hyun Myung Jang
author_facet	Seungyang Heo Chadol Oh Junwoo Son Hyun Myung Jang
author_sort	Seungyang Heo
title	Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_short	Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_full	Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_fullStr	Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_full_unstemmed	Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films
title_sort	influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in ndnio3−δ epitaxial thin films
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/7054610b50d846d5842cf680e20b0278
work_keys_str_mv	AT seungyangheo influenceoftensilestraininducedoxygendeficiencyonmetalinsulatortransitionsinndnio3depitaxialthinfilms AT chadoloh influenceoftensilestraininducedoxygendeficiencyonmetalinsulatortransitionsinndnio3depitaxialthinfilms AT junwooson influenceoftensilestraininducedoxygendeficiencyonmetalinsulatortransitionsinndnio3depitaxialthinfilms AT hyunmyungjang influenceoftensilestraininducedoxygendeficiencyonmetalinsulatortransitionsinndnio3depitaxialthinfilms
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Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

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